Preparation method of semiconductor structure

Abstract

The invention relates to the technical field of semiconductors, in particular to a preparation method of a semiconductor structure. The preparation method of the semiconductor structure comprises the steps of obtaining a crystal epitaxial structure, wherein the crystal epitaxial structure comprises an aluminum-containing epitaxial layer; putting the crystal epitaxial structure into a wet oxidation device, and introducing oxidizing gas and nitrogen gas into the crystal epitaxial structure, so that a current channel is formed in the center of the aluminum-containing epitaxial layer; the working temperature of the wet oxidation device is continuously increased in a gradient manner; when the temperature of the wet oxidation device is raised to the pretreatment temperature, deionized water vapor is fed into the wet oxidation device, so that the deionized water vapor is ionized into active oxidation particles, and the active oxidation particles and the aluminum-containing epitaxial layer are subjected to an oxidation-reduction reaction to generate an insulator; the pretreatment temperature ranges from 125 DEG C to 155 DEG C, and the working vacuum degree of a wet oxidation device ranges from 0.2 Pa to 10 Pa. According to the preparation method of the semiconductor structure, the technical problems that in an existing epitaxial structure, the compactness of the region, close to the current channel, of the insulator is not high, and the refractive index is difficult to reduce are solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a method for preparing a semiconductor structure. Background technique [0002] A semiconductor device is an electronic device whose conductivity is between a good conductor and an insulator, and uses the special electrical properties of semiconductor materials to complete specific functions. It can be used to generate, control, receive, transform, amplify signals and perform energy conversion. The semiconductor device includes an epitaxial structure, the epitaxial structure includes an aluminum-containing epitaxial layer, and the aluminum-containing epitaxial layer can be oxidized by a wet oxidation process to form an oxide structure that is an insulator and form a current channel to suppress the diffusion of operating current in the semiconductor device. [0003] The process of the wet oxidation process is as follows. In an oxidizing environment such as high temp...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a semiconductor structure, so as to alleviate the technical problems in the prior art that the insulator near the current channel area is not dense and the refractive index is difficult to reduce after the epitaxial structure is oxidized

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