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Neuromorphic visual sensor and application and preparation method thereof

A visual sensor, neuromorphic technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., to achieve high-efficiency sensing functions, improve processing speed and computing efficiency

Active Publication Date: 2022-07-22
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ultraviolet photodetector of GaN HEMT can only respond to one-way light, and is affected by the quality of material epitaxy and manufacturing process, and its data storage capacity is still far lower than that of other photoelectric memories.

Method used

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  • Neuromorphic visual sensor and application and preparation method thereof
  • Neuromorphic visual sensor and application and preparation method thereof
  • Neuromorphic visual sensor and application and preparation method thereof

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Experimental program
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Embodiment 1

[0044] The embodiment of the present invention provides a preparation method of a neuromorphic vision sensor based on a perovskite hetero-gate structure, see figure 1 and figure 2 , which includes the following steps:

[0045] The first step is to fabricate a GaN substrate.

[0046] like figure 1 As shown, in the embodiment of the present invention, a metal chemical vapor deposition system is used to grow a high-quality AlGaN / GaN heterojunction material on the SiC substrate 1, and the heterojunction material is an epitaxial layer structure. AlN nucleation layer 2 , GaN buffer layer 3 , AlN insertion layer 4 , and AlGaN barrier layer 5 .

[0047] Preferably, the thickness of the AlN nucleation layer 2 is 100 nm, the thickness of the GaN buffer layer 3 is 1.5 μm, the thickness of the AlN insertion layer 4 is 1 nm, and the thickness of the AlGaN barrier layer 5 is 22 nm.

[0048] In step 2, the source electrode 6a and the drain electrode 6b are fabricated.

[0049] Specific...

Embodiment 2

[0069] This embodiment provides a neuromorphic vision sensor based on a perovskite hetero-gate structure, which is prepared according to the preparation method provided in the first embodiment. Figures 3 to 8 The performance test results of the neuromorphic vision sensor based on the perovskite hetero-gate structure are shown.

[0070] see image 3 , image 3 Shown is the perovskite hetero-gate structure-based neuromorphic vision sensor at drain-source bias V ds =1 V, when the incident light is 532 nm, the transfer characteristic curves measured under different laser power densities, different laser power densities ( image 3 arrow direction) including 0.8µW / cm 2 , 2.3µW / cm 2 , 4.6µW / cm 2 . in, image 3 The abscissa is the gate voltage V gs , the ordinate is the drain-source current I ds . from image 3 It can be seen in the 532nm light stimulation that even if the incident light power is very small, the transfer characteristic curve will still change, that is, the...

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Abstract

The invention provides a neuromorphic visual sensor and application and a preparation method thereof, and belongs to the technical field of semiconductors, the visual sensor comprises a high-k dielectric layer, a perovskite layer and a top gate electrode, the perovskite layer is located on the high-k dielectric layer, the top gate electrode is located on the perovskite layer, and the high-k dielectric layer is located on the top gate electrode. The neuromorphic visual sensor has positive / negative photocurrent response from ultraviolet to visible light wave bands. According to the invention, the high-k dielectric layer / perovskite layer is introduced into the AlGaN / GaN heterostructure as a gate dielectric, and the excellent photoelectric properties of the AlGaN / GaN heterostructure and perovskite are combined together, so that the proposed visual sensor architecture successfully breaks through the limitation of unidirectional photoresponse of an AlGaN / GaN heterostructure photoelectric detector; the optical information of the ultraviolet-visible light region is effectively sensed and stored.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to the improvement of AlGaN / GaN high electron mobility transistors (HEMTs), including a gallium nitride-based neuromorphic vision sensor based on a perovskite hetero-gate structure and a preparation and application method thereof . Background technique [0002] As GaN-based semiconductors, AlGaN / GaN high electron mobility transistors (HEMTs) are widely used in high-frequency power amplifiers and optoelectronic devices due to their ability to form a two-dimensional electron gas (2DEG) at the AlGaN / GaN heterostructure interface. Since the ultraviolet photodetector based on AlGaN / GaN heterostructure was first proposed by Khan et al., the photodetector based on AlGaN / GaN heterostructure has been moved from exploratory research to its excellent thermal stability and radiation resistance. Industrial applications are widely used in commercial and military applications, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/30H01L27/28H01L29/778H01L51/42H01L51/48H01L21/335
CPCH01L29/7787H01L29/66462H10K19/20H10K39/32H10K30/10H10K30/65H10K30/354
Inventor 廖蕾邹旭明夏桢吕亚威洪曦彤
Owner HUNAN UNIV
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