Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultraviolet radiation dose monitor and preparation method thereof

An ultraviolet radiation and monitor technology, applied in the semiconductor field, can solve the problems of high power consumption and low precision, and achieve the effects of low power consumption, small size and simple structure

Pending Publication Date: 2022-07-22
SUZHOU UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention is to overcome the problems of low precision and high power consumption in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet radiation dose monitor and preparation method thereof
  • Ultraviolet radiation dose monitor and preparation method thereof
  • Ultraviolet radiation dose monitor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The core of the invention is to provide an ultraviolet radiation dose monitor and a preparation method thereof, which have low power consumption and high precision.

[0036] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0037] refer to figure 1 As shown, the ultraviolet radiation dose monitor provided by the present invention includes:

[0038] Flexible substrate layer 10, the material can be selected from flexible substrates such as PET, PI or PEN, and the material of the flexible substrate 10 can also be selected from a heavily doped silicon wafer with a silicon oxide layer, wherein the heavily doped silicon The chip has good conductivity and can function as a gate, and the built-in silicon oxide layer can act as an insulating ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to the ultraviolet radiation dose monitor, the lower electrode serves as an auxiliary electrode to cooperate with a device to work and is used for controlling electric fields in the organic semiconductor layer and the insulating layer; the insulating layer blocks communication between the lower electrode and the organic photochromic material-polymer composite film layer, and current carriers in a channel between the upper electrode groups are prevented from flowing to the lower electrode. The upper electrode group controls the electric fields of the organic photochromic material-polymer composite film layer and the organic semiconductor layer; the organic photochromic material-polymer composite film layer is used as a dielectric layer, when the device works, the properties of the structure and the like of the organic photochromic material are changed and charges are stored when the device is irradiated by ultraviolet light, so that the transmission current between the upper electrode groups is changed, and the current is not changed under the illumination of which the wavelength is greater than that of ultraviolet light or under the dark condition; changes of channel currents between the upper electrodes are in one-to-one correspondence with ultraviolet radiation doses, and the cumulant of ultraviolet radiation can be directly reflected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an ultraviolet radiation dose monitor and a preparation method. Background technique [0002] The arrival of the information age has given birth to the development of the Internet of Things technology. The development of new electronic devices for the Internet of Things technology has become an important part of today's electronic information technology, and it is also one of the most important basic academic research hotspots and frontiers. Novel wearable electronic devices show great application potential and value in health protection, environmental monitoring and other fields, especially with the increasing awareness of people's health and environmental protection, monitoring of human physiological signals and environmental signals such as ultraviolet radiation and air quality. Wearable electronic devices are becoming more and more popular. Wearable electronic UV rad...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48G01J1/42
CPCG01J1/429H10K71/16H10K71/12H10K71/60H10K30/451H10K30/81H10K77/111
Inventor 高旭殷子懿王穗东朱晨辉徐建龙仲亚楠
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products