Full-color Micro-LED flip chip structure and preparation method thereof
A flip-chip, LED epitaxial wafer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor dispersion uniformity of quantum dots, low wafer production efficiency, cumbersome process flow, etc., to shorten the preparation cycle, Improves process yield, strength and purity
Active Publication Date: 2022-07-26
西安赛富乐斯半导体科技有限公司
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Problems solved by technology
[0003] The purpose of the present invention is to provide a full-color Micro-LED flip-chip structure, which solves the problems of poor dispersion uniformity of quantum dots and low brightness and purity of red and green light existing in the existing quantum dot film color conversion scheme
[0004] Another object of the present invention is to provide a method for preparing a full-color Micro-LED flip-chip structure, which solves the problems of cumbersome process flow and low production efficiency in the existing nanoimprinting method
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[0037] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0038] The invention provides a full-color Micro-LED flip-chip structure and a preparation method thereof, such as figure 1 and figure 2 As shown, taking the size of Micro LED as 30um * 50um as an example, the specific implementation steps are as follows:
[0039] (1) After the double-sided polished sapphire substrate 1 is cleaned, MOCVD is used to sequentially grow a buffer layer 2, a first intrinsic GaN layer 3 (thickness 0.5um~1um), and an N-type GaN layer 4 (thickness 5~1um) on the substrate. 7um), the second intrinsic GaN layer 5 (thickness 0.5um~1um), the multiple quantum well light-emitting layer 6 MQWs, and the P-type GaN layer 7, forming a GaN-based LED epitaxial wafer on a sapphire substrate;
[0040] (2) After the epitaxial wafer is cleaned, UV lithography and ICP etching are used in turn to etch and etch the Micro LED mesa area 1...
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The invention discloses a full-color Micro-LED flip chip structure and a preparation method thereof, the full-color Micro-LED flip chip structure comprises a GaN-based LED epitaxial wafer, the GaN-based LED epitaxial wafer is provided with three Micro LED mesa areas in parallel, each Micro LED mesa area is provided with a rectangular groove area, and a nanopore color conversion layer communicated with the three rectangular groove areas is embedded in the LED epitaxial wafer. According to the invention, the GaN nanopore structure is used as the quantum dot bearing layer, the problem of non-uniform distribution of quantum dots in the quantum dot film is avoided, and the intensity and purity of emergent light are effectively improved by using the scattering effect of the nanopore structure on light; in the aspect of preparation, the uniformly distributed GaN nanopore structure can be obtained by electrochemical corrosion in the LED epitaxial wafer in one step, so that the preparation period of the device is greatly shortened, and the process output is greatly improved.
Description
technical field [0001] The invention belongs to the technical field of Micro LED display, and particularly relates to a full-color Micro-LED flip-chip structure. The invention also relates to a preparation method of a full-color Micro-LED flip-chip structure. Background technique [0002] Micro LED display technology is a display technology in which self-luminous micron-scale LEDs are used as light-emitting pixel units, and they are assembled on the drive panel to form an LED array. LCD, OLED technology, Micro LED has greater advantages in brightness, contrast, resolution, energy consumption, response speed, etc., so it is known as the ultimate display technology in the LED display industry. Although Micro LED display technology has significant advantages, there are still some technical bottlenecks in full-color, mass transfer, chips, etc. In the full-color realization scheme of Micro LED, the quantum dot color conversion method is usually used at present. At present, it h...
Claims
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Login to View More IPC IPC(8): H01L33/06H01L33/08H01L33/00
CPCH01L33/06H01L33/08H01L33/007
Inventor 胡青宋杰陈辰孙恒阳
Owner 西安赛富乐斯半导体科技有限公司