Check patentability & draft patents in minutes with Patsnap Eureka AI!

Film type electrostatic chuck with pressure sensing function

A technology of electrostatic chuck and pressure sensor, which is applied to the plating of circuits, electrical components, superimposed layers, etc., can solve problems such as pressure sensor combination, pressure sensor interference, and inability to adjust equipment and process synchronously, so as to ensure normal operation and prolong The effect of improving the service life and yield rate

Pending Publication Date: 2022-07-29
曲面超精密光电(深圳)有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, thin-film electrostatic chucks have been widely used in display industries such as semiconductor wafer processing, liquid crystal panels, and AMOLED panels. The sensor is very sensitive to noise and electromagnetic wave interference, so the electrostatic chuck is easy to cause interference to the pressure sensor, resulting in the inability to make synchronous adjustments to the equipment and process to improve the yield and achieve optimization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film type electrostatic chuck with pressure sensing function
  • Film type electrostatic chuck with pressure sensing function
  • Film type electrostatic chuck with pressure sensing function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A thin-film electrostatic chuck with pressure sensing function proposed by the present invention includes an electrostatic chuck 1 , an interference shielding film 2 and a pressure sensor 3 ;

[0027] like Figure 1-3 As shown, the electrostatic chuck 1 and the pressure sensor 3 are arranged on the interference shielding film 2, and the electrostatic chuck 1 and the pressure sensor 3 are respectively located on both sides of the interference shielding film 2; the pressure sensor 3, the electrostatic chuck 1 and the interference shielding film 2 pass through special Glue connection, combined with external control circuit board to complete the design;

[0028] The manufacturing process steps of the interference shielding film 2 are as follows:

[0029] S1. Use the calculation software to match the parameters of the material and the algorithm to carry out multiple designs, and finally select the circuit diagram with the pressure sensing function; the calculation software ...

Embodiment 2

[0035] Compared with the first embodiment, this embodiment further includes an electrostatic chuck 1 , an interference shielding film 2 and a pressure sensor 3 ;

[0036] like Figure 1-3 As shown, the electrostatic chuck 1 and the pressure sensor 3 are arranged on the interference shielding film 2, and the electrostatic chuck 1 and the pressure sensor 3 are respectively located on both sides of the interference shielding film 2;

[0037] The manufacturing process steps of the interference shielding film 2 are as follows:

[0038] S1. Use the calculation software to match the parameters of the material and the algorithm to carry out multiple designs, and finally select the circuit diagram with the pressure sensing function;

[0039] S2. According to the designed circuit diagram with pressure sensing function, cooperate with the equipment to perform photolithography and drilling on the film;

[0040] S3. Put the film with the circuit after drilling into the electroplating equ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of electrostatic chucks, in particular to a film type electrostatic chuck with a pressure sensing function. The device comprises an electrostatic chuck, an interference shielding film and a pressure sensor. The electrostatic chuck and the pressure sensor are arranged on the interference shielding film, and the electrostatic chuck and the pressure sensor are located on the two sides of the interference shielding film respectively. Carrying out multiple designs and selecting an optimized circuit diagram by utilizing calculation software matched with parameters and algorithms of materials; photoetching and drilling are carried out on the thin film; and electroplating and plating nickel and gold on the thin film with the circuit, and finally plating a layer of indium compound to form the interference shielding film. According to the invention, the electrostatic chuck has a pressure measurement capability at the same time, technological parameters are adjusted through real-time data feedback so as to improve the yield, the device is more intelligent, and the quality is effectively improved; the electrostatic chuck can be protected, and the service life of the film type electrostatic chuck is prolonged; it can be confirmed that the film type electrostatic chuck can correctly suck a target object, and normal operation is ensured.

Description

technical field [0001] The invention relates to the technical field of electrostatic chucks, in particular to a film-type electrostatic chuck with pressure sensing function. Background technique [0002] The electrostatic adsorption technology used by the electrostatic chuck is an advantageous technology that replaces the traditional mechanical clamping and vacuum adsorption methods. It is widely used in semiconductor, panel display, optics and other fields. [0003] At present, thin-film electrostatic chucks have been widely used in display industries such as semiconductor wafer processing, liquid crystal panels and AMOLED panels. However, due to the inability to integrate well with pressure sensors, it is impossible to timely feedback pressure changes. The sensor is very sensitive to the interference of noise and electromagnetic waves, so the electrostatic chuck is easy to interfere with the pressure sensor, which makes it impossible to synchronously adjust the equipment a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/683C25D5/12C25D5/48C23C28/00C23C14/35H01L21/67
CPCH01L21/6833C25D5/12C25D5/48C23C28/30C23C14/35H01L21/67242
Inventor 黄连恕刘宝华
Owner 曲面超精密光电(深圳)有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More