Semiconductor device and preparation method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of poor performance of DRAM storage devices and easy collapse of cylindrical capacitors, etc., and achieve good anti-leakage characteristics, good gap filling, and improved performance.
Pending Publication Date: 2022-07-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology
For cylindrical capacitor structures, the high aspect ratio makes cylindrical capacitors prone to collapse
In addition, there are many defects in the existing columnar capacitor structure, which makes the performance of DRAM memory devices not good.
Method used
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[0042] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present invention.
[0043] Various schematic diagrams of structures according to embodiments of the present invention are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and in practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art should Regions / lay...
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The invention relates to a semiconductor device. The semiconductor device comprises a substrate; the interlayer dielectric layer is located on the substrate; a contact hole is formed in the interlayer dielectric layer, and a storage node contact plug is arranged in the contact hole; the plurality of columnar capacitors are positioned on the interlayer dielectric layer; the columnar capacitor comprises a lower electrode which is in the shape of a cylinder with a bottom part, and the bottom part is electrically connected with a storage node contact plug; the dielectric layer covers the outer side wall and the top end of the lower electrode; the upper electrode is positioned on the outer side of the dielectric layer; the cylindrical capacitor further comprises a cylinder, the cylindrical cavity of the lower electrode is filled with the cylinder, and the cylinder is formed by a dielectric film. According to the invention, the dielectric film is adopted to form the cylinder, so that the performance of the manufactured semiconductor device is improved, and the semiconductor device has a good anti-creeping characteristic.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] With the continuous progress of semiconductor manufacturing technology and the miniaturization of product size, the integration degree of dynamic random access memory (DRAM) is also increased, and the size of the capacitor structure of DRAM will inevitably gradually decrease, which reduces the effective capacitance value of the capacitor structure. In response to the high integration of DRAM, the operating voltage has been reduced to a lower voltage. Although the size has become smaller, the charging capacity required for the operation of the memory element still requires sufficient capacitance, and it is necessary to ensure that the adjacent capacitors are reserved to ensure insulation. enough space. [0003] In order to increase the effective capacitance value of the capacitor structu...
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IPC IPC(8): H01L49/02H01L27/108H10B12/00
CPCH01L28/40H01L28/91H10B12/30
Inventor 徐康元高建峰项金娟李俊杰周娜白国斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI