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Preparation method of cadmium telluride arsenic-doped metallographic specimen

A metallographic sample, cadmium telluride technology, applied in the preparation of test samples, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as preparation methods that have not been reported, and achieve a clear and complete microstructure , high reproducibility, scratch-free effect

Pending Publication Date: 2022-08-02
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the metallographic sample preparation method of cadmium telluride doped with arsenic target has not been reported yet.

Method used

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  • Preparation method of cadmium telluride arsenic-doped metallographic specimen
  • Preparation method of cadmium telluride arsenic-doped metallographic specimen
  • Preparation method of cadmium telluride arsenic-doped metallographic specimen

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a cadmium telluride-doped arsenic metallographic sample of the present embodiment includes the following steps:

[0031] (1) Sampling: use wire cutting equipment to cut a 10*10*15cm sample of cadmium telluride doped with arsenic;

[0032] (2) Marking: mark the end face (C) and surface (S) of the sample to be observed for metallography;

[0033] (3) Grinding: use 320-mesh water-based sandpaper on the abrasive disc of the polishing agent, while flushing water, grind the abrasive surface of the sample on the rotating abrasive disc, lightly press the abrasive surface of the sample on the water-based sandpaper, along the diameter Rotate slightly in the opposite direction to the rotation direction of the grinding disc until the rough grinding marks disappear completely and the fine grinding marks are consistent. During the grinding process, the rotating speed is 300r / min, and each surface is ground for 5 minutes, and 1-2mm is removed. (If there are de...

Embodiment 2

[0041] A method for preparing a cadmium telluride-doped arsenic metallographic sample of the present embodiment includes the following steps:

[0042] (1) Sampling: use wire cutting equipment to cut a 10*10*15cm sample of cadmium telluride doped with arsenic;

[0043](2) Marking: mark the end face (C) and surface (S) of the sample to be observed for metallography;

[0044] (3) Grinding: use 320-mesh water-based sandpaper on the abrasive disc of the polishing agent, while flushing water, grind the abrasive surface of the sample on the rotating abrasive disc, lightly press the abrasive surface of the sample on the water-based sandpaper, along the diameter Rotate slightly in the opposite direction to the rotation direction of the grinding disc until the rough grinding marks disappear completely and the fine grinding marks are consistent. During the grinding process, the rotating speed is 300r / min, and each surface is ground for 5 minutes, and 1-2mm is removed. (If there are dee...

Embodiment 3

[0052] (1) Sampling: use wire cutting equipment to cut a 10*10*15cm sample of cadmium telluride doped with arsenic;

[0053] (2) Marking: mark the end face (C) and surface (S) of the sample to be observed for metallography;

[0054] (3) Grinding: use 320-mesh water-based sandpaper on the abrasive disc of the polishing agent, while flushing water, grind the abrasive surface of the sample on the rotating abrasive disc, lightly press the abrasive surface of the sample on the water-based sandpaper, along the diameter Rotate slightly in the opposite direction to the rotation direction of the grinding disc until the rough grinding marks disappear completely and the fine grinding marks are consistent. During the grinding process, the rotating speed is 300r / min, and each surface is ground for 5 minutes, and 1-2mm is removed. (If there are deep cracks on the surface to be ground, sand it with 100-grit sandpaper first until the deep cracks disappear)

[0055] (4) Rough polishing: Rota...

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Abstract

The invention discloses a preparation method of a cadmium telluride arsenic-doped metallographic specimen, and belongs to the technical field of metallographic specimen preparation. The preparation method of the cadmium telluride arsenic-doped metallographic specimen comprises the steps of grinding, rough polishing, fine polishing, mechanical polishing and chemical corrosion. According to the method, the metallographic sample of the cadmium telluride arsenic-doped target material is prepared by adopting corrosion sample preparation for the first time, and the technical vacancy in the aspect of cadmium telluride arsenic-doped metallographic corrosion sample preparation is made up; according to the preparation method, multiple polishing modes and chemical corrosion are combined, the preparation time is short, the method is simple and efficient, and the reproducibility is high; the cadmium telluride arsenic-doped metallographic specimen prepared by the preparation method of the cadmium telluride arsenic-doped metallographic specimen is clear and complete in microscopic structure, and has no scratch, defect and pit defects.

Description

technical field [0001] The invention relates to a preparation method of a cadmium telluride-doped arsenic metallographic sample, and belongs to the technical field of metallographic sample preparation. Background technique [0002] Transparent conductive films are mainly divided into three categories: metal films, oxide films and other compound films. Cadmium telluride is a compound of II-IV group. It is a direct bandgap semiconductor with strong light absorption. Its forbidden band width has a good match with the ground solar spectrum. It is a good solar cell material. Compared with other types of solar cells such as crystalline silicon and gallium arsenide, cadmium telluride thin film solar cells have the highest theoretical photoelectric conversion efficiency, about 30%, and the temperature coefficient of cadmium telluride thin film solar cell modules is about -0.25. % / ℃, the lower temperature coefficient means that the output power of the cadmium telluride thin film ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N1/32G01N1/30G01N1/34
CPCG01N1/286G01N1/32G01N1/30G01N1/34Y02P70/50
Inventor 周荣艳岑力衡文崇斌
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD