Preparation method and application of flexible electronic material based on metal phase change
A technology of metal phase change and electronic materials, applied to conductive materials dispersed in non-conductive inorganic materials, photovoltaic power generation, etc., can solve the problems of lack of deformation ability, high conductive threshold, and easily damaged resistance of conductive paths, and achieve the goal of manufacturing The method is simple and easy to implement, with good application prospects and simple post-processing effects
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Embodiment 1
[0050] (1) Put metal gallium and indium into a round-bottomed flask in a mass ratio of 3:7, and after heating and melting (the temperature reaches the melting point of the metal and the two metals are melted), mechanically stir to obtain Ga 0.3 In 0.7 binary metal.
[0051] (2) Mix the polydimethylsiloxane (PDMS) and the curing agent (containing platinum catalyst, purchased with PDMS) in a mass ratio of 10:1, and then spin coating (300RPM 18S, 600RPM 30S) to print on the On the polytetrafluoroethylene sheet, after heating and curing at 80°C, a flexible substrate is obtained to be used as a PDMS substrate.
[0052] (3) Put Ga 0.3 In 0.7 The solid-liquid two-phase metal is printed on the PDMS substrate which has been heated and cured in step (2) by a blade coating method.
[0053] (4) Then mix the polydimethylsiloxane (PDMS) and the curing agent (containing platinum catalyst, purchased with PDMS) in a mass ratio of 10:1, and print them on the surface by spin coating (300RPM ...
Embodiment 2
[0059] (1) Put metal gallium and indium into a round-bottomed flask in a mass ratio of 3:7, heat and melt and mechanically stir to obtain Ga 0.3 In 0.7 binary metal.
[0060] (2) 0.35mLGa after melting by heating 0.3 In 0.7 The binary metal was mixed with 0.325 mL of Ecoflex A by trituration, and the mixture was cooled to room temperature.
[0061] (3) 0.325 mL of Ecoflex B was added to the mixture, and the mixture was ground and mixed, and then put into a mold for curing at room temperature to obtain a flexible electronic material based on metal phase change.
[0062] The resistance of the flexible electronic materials based on metal phase change prepared in this example is measured at different temperatures. By changing the temperature (10-160 ° C), the solid-liquid phase of the metal in the Ga-In solid-liquid two-phase region can be precisely controlled. The properties of the material are regulated. Figure 5 It is a graph of the resistance versus temperature of the f...
Embodiment 3
[0064] The preparation method of Example 3 is the same as that of Example 2, except that the Ga-In solid-liquid two-phase metal is replaced with Ga-Sn solid-liquid two-phase metal, and the mass ratio of metal gallium to tin is 3:7.
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