Nano twin-crystal copper electroplating solution, electroplating method, nano twin-crystal copper material and application
A technology of nano-twinned copper and electroplating solution, which is applied in the field of nano-twinned copper materials and applications, nano-twinned copper electroplating solution, can solve the problems of increasing costs and cumbersome procedures, and achieve the goal of increasing the proportion, optimizing the process technology, and practical strong effect
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Embodiment 1
[0064] (1) Preparation of nano-twinned copper electroplating solution
[0065] The electroplating solution is prepared with the following component ratios and dispersed uniformly: copper ion 30g / L, sulfuric acid 30g / L, chloride ion 30ppm, inhibitor 30ppm, electroplating auxiliary 100mM, pure water 250mL; wherein, the inhibitor is gelatin with a coagulation value of 100bloom , the plating aid is nickel sulfamate (Ni(SO 3 NH 2 ) 2 ·4H 2 O).
[0066] (2) DC electroplating
[0067] a. Cathode pretreatment. A high-purity titanium plate was used as the cathode, which was washed with 10wt.% sodium hydroxide (NaOH) solution, followed by 10wt.% dilute sulfuric acid (H 2 SO 4 ) solution acid wash, deionized water rinse process.
[0068] b. DC electroplating. Immerse the titanium plate cathode and the activated phosphor copper anode (phosphorus content 0.05wt.%) in the electroplating solution, apply 300 rpm magnetic stirring, and control the plating solution at a constant temper...
Embodiment 2
[0072] (1) Preparation of nano-twinned copper electroplating solution
[0073] The electroplating solution is prepared with the following component ratios and dispersed uniformly: copper ion 30g / L, sulfuric acid 30g / L, chloride ion 30ppm, inhibitor 30ppm, electroplating auxiliary 5mM, pure water 250mL; wherein, the inhibitor is gelatin with a coagulation value of 200bloom , the electroplating aid is nickel sulfate.
[0074] (2) Preparation of wafer test pieces
[0075] The test piece is cut from an 8-inch silicon-based wafer with an external dimension of 21×21mm 2 , the surface is sequentially provided with a sputtered titanium-copper seed layer with a thickness of 400 nm and a photoresist layer with a thickness of 5±1 μm, and the exposure area (ie, the conductive area) accounts for 20%. The test piece has 3 kinds of RDLs of line width / space (L / S) formed by photolithography: 15 / 15 μm for Type I L / S, 8 / 8 μm for Type II L / S, and 4 / 4 μm for Type III L / S .
[0076] (3) Electropl...
Embodiment 3
[0082] The difference from Example 1 is that the concentration of the plating aid is 0.2 mM.
[0083] The thickness of the obtained coating is 15 μm, and the cross section is mainly composed of columnar crystals with high-density nano-twinned wafer layers, which are mainly distributed along the inclination angle to the growth direction, and the lower part is an equiaxed fine-grained transition layer of non-twinned structure, with a thickness of 2-3 μm. between.
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