Single-electron memory unit with nano metal oxide wire
A nano-metal, storage unit technology, applied in electrical components, nanotechnology, nanotechnology, etc., can solve the problems of complexity, high operating voltage, and unfavorable stabilization of single-electron memory performance, and achieve simple process and stable operation. Good results
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[0011] figure 1 It is a schematic diagram of a three-dimensional structure of an ultra-thin nanometer metal oxide wire TiOx single-electron storage unit according to an embodiment of the present invention.
[0012] Such as figure 1 As shown, the ultra-thin nanometer metal oxide line TiOx single-electron storage unit includes: silicon substrate 2, insulating layer 3 and insulating layer 6, source line 4; data line 5, active area 7 of memory unit, write line 8 . There is a layer of silicon dioxide insulating layer 3 on the silicon substrate 2, an ultra-thin titanium film is deposited on the insulating layer 3, and the active area 7 of the memory cell is locally oxidized, between the active area 7 and the write line 8 of the upper layer Au There is a layer of SiO 2 The insulating layer 6, the source line 4 of Au / Ti and the data line 5 of Au / Ti are located in the active area 7 and SiO 2 both sides of the insulating layer 6. Wherein, the length of the active region 7 is the di...
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