Plasma wave-filter indium nitride semiconductor thin-film

Abstract

The invention provides the semiconductor indium nitride film as the plasma filtering material grown by the magnetron sputtering method. The atom percent between In element and N element in the thin film being 1:1 possesses better crystal quality. High electron concentration required by the plasma filter can be reached without need of adulteration. The electron concentration and the thickness of the thin film can be adjusted through the controlled growth condition in order to suit the different requirement of the filter. The invented film possesses the advantages of good filtering performance,small light loss, large transmittance and good for integrating system.

Description

technical field [0001] The invention relates to a semiconductor thin film, in particular to a plasma filter indium nitride semiconductor thin film, which belongs to the field of semiconductor materials. Background technique [0002] A thermo-photovoltaic power generation system is a device that converts thermal energy into electrical energy. It heats the luminescent material through a heat source to generate near-infrared light radiation, and then converts the light energy into electrical energy through a semiconductor photovoltaic cell, which has the advantages of high energy density and high conversion efficiency. Plasma filters are one of the key devices in thermal photovoltaic systems. , can significantly improve the energy conversion efficiency of the system, and the filter material is generally a high-carrier concentration, wide-bandgap semiconductor film. The basic characteristic of the plasma filter is that the frequency is higher than the filter plasma frequency ω ...

AI Technical Summary

Problems solved by technology

However, in the study of the optical properties of these Si thin film plasmonic filters, it is found that although the light reflectance below the plasma frequency can reach 85%, the light transmittance above the plasma frequency (that is, the light that can be used) is generally relatively low. Low (<50%), it is not conducive to the transmission of available light, and the defects caused by doping also lead to large light absorption in the near-infrared band

In addition, from the nature of Si itself, due to the small band gap of Si (1.1eV), the transmission band of the filter (ω p The frequency corresponding to the band gap) is relatively narrow, which also limits the full transmission of useful light; and the required high carrier concentration must be achieved through heavy doping, which complicates the process