Electrically conducting transparent film and its preparing process
A transparent conductive film and thin film technology, applied to conductive layers, circuits, electrical components and other directions on insulating carriers, can solve problems such as complex preparation processes
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Embodiment 1
[0008] Example 1: Preparation of In by vacuum reaction evaporation method 2 o 3 :X transparent conductive film, the specific steps are as follows:
[0009] 1. Exhaust the vacuum chamber, the pressure is lower than 1×10 -2 Pa, at the same time, the glass substrate is heated by an electric heater in the vacuum chamber, and the substrate temperature is controlled in the range of 200°C-400°C;
[0010] 2. Fill the vacuum chamber with oxygen, adjust the main valve of the vacuum chamber, and control the partial pressure of oxygen in the vacuum chamber at 7×10 -2 Pa-1.3×10 -1 Pa range;
[0011] 3. Start heating to evaporate indium (In), and form In on the heated glass substrate 2 o 3 film. The film acts as an anti-diffusion barrier. When its thickness reaches 30-50nm, start to evaporate XO at the same time 3 , for doping, to control the XO 3 The amount of incorporation to form In 2 o 3 :X transparent conductive film. During the film formation process, the film deposition ...
Embodiment 2
[0013] Example 2: Preparation of In by reactive magnetron sputtering 2 o 3 :X transparent conductive film, the specific steps are as follows:
[0014] 1. Preparation of target for sputtering
[0015] The target for sputtering can be an oxide target or a metal sputtering target.
[0016] (1) Mix indium oxide with molybdenum oxide or tungsten oxide in a certain proportion (by weight, molybdenum oxide or tungsten oxide accounts for 3-5%), heat and press in the mold, and pass reducing gas to make oxide target.
[0017] (2) Prepare metal materials for targeting. According to the sputtering rate of different materials, indium and X are made into sputtering targets. Control the content of X (accounting for 3-5%).
[0018] In order to prepare the anti-diffusion barrier layer, a pure indium target needs to be prepared additionally to prepare In 2 o 3 film.
[0019] 2. Preparation of In by reactive magnetron sputtering 2 o 3 :X film process conditions are as follows:
[0020...
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