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Dynamic cellular automaton method for simulation of photoresist three dimensional etching process

A cellular automaton, etching process technology, applied in the direction of computer for chemical processing process, microlithography exposure equipment, simulation process for specific applications, etc., can solve the simulation method that is difficult to achieve stability, simulation speed and Accuracy requirements and other issues, to achieve the effect of fast operation speed, reduced simulation time and good stability

Inactive Publication Date: 2006-08-16
SOUTHEAST UNIV
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Problems solved by technology

[0006] Technical problem: The purpose of the present invention is to provide a dynamic cellular automaton method for simulating the three-dimensional etching process of photoresist, which solves the problem that the existing three-dimensional etching process simulation method for photoresist is difficult to achieve stability and simulation speed at the same time and accuracy requirements

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  • Dynamic cellular automaton method for simulation of photoresist three dimensional etching process
  • Dynamic cellular automaton method for simulation of photoresist three dimensional etching process
  • Dynamic cellular automaton method for simulation of photoresist three dimensional etching process

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[0026] specific implementation plan

[0027] In the present invention, the photoresist to be etched is subdivided into an array of small cubes with a side length a, and each cube is used as a cell of a cellular automaton. During the cell etching process, a certain moment t corresponds to cell state C i，j，k (t) is defined as the etched volume V of the cell at this time e (t) and the whole cell volume V c The ratio of:

[0028] C i , j , k ( t ) = V e ( t ) V c - - - ( 1 )

[0029] The etching rate R of each cell can be obt...

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Abstract

The invention discloses a dynamic cellular automaton method for simulation of photoresist three dimensional etching process by employing a three-dimensional Mole neighboring region, when calculating the etching process for an element cell, the effect of 6 adjacent element cells and 12 opposite adjacent element cells are considered while neglecting the effect of the 8 dot adjacent element cells to the etching process, the process comprises instituting rules to determine the surface element cells during simulation process, considering the remaining time of the time step after an element cell is completely etched within a time step, adding the remaining time to the next time step for etching the adjacent element cell.

Description

technical field [0001] The invention provides a dynamic cellular automaton method for simulating a three-dimensional etching process of photoresist, and belongs to the technical field of microelectronic lithography process simulation. Background technique [0002] With the continuous shrinking of micromechanical electronic systems (MEMS) and integrated circuit (IC) devices, the three-dimensional simulation of lithography process has become an accurate analysis of the processing process of some key complex structures such as contact holes and corners, and it can be used in layout design. The necessary tools for optimizing the design accordingly. Lithography process simulation basically includes spatial image intensity distribution, exposure, post-baking, and etching. Among them, photoresist etching process simulation is the most time-consuming simulation step. To improve the speed of lithography process simulation, improve the The speed of the resist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00G06G7/58B81C1/00G03F7/20
Inventor 周再发黄庆安李伟华
Owner SOUTHEAST UNIV
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