Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack
A technology of infrared detector and infrared absorbing layer, which is applied in the field of micromechanics, can solve the problems of inaccurate positioning and high production cost, and achieve the effects of reducing production cost, improving performance and cost, and positioning accurately
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[0022] Example 1
[0023] On the (100) single crystal silicon wafer 7, a layer of silicon nitride layer 9 is first deposited by low pressure chemical vapor (LPCVD), where the LPCVD deposition temperature is 800°C, and the thickness of the silicon nitride layer is 0.15 microns; LPCVD deposits polysilicon with a deposition temperature of 640°C and a thickness of 0.6 microns. All thermal oxidation generates silicon oxide 8. Then a layer of silicon nitride is deposited by LPCVD with a thickness of 0.1 microns to form "silicon nitride-silicon oxide-silicon nitride "The sandwich layer.
[0024] Then use LPCVD to deposit a layer of polysilicon, with a thickness of 0.6 microns, doped with boron to make it have a certain surface resistance; and then thermally oxidize the surface, photoetching the shape of the thermocouple silicon strip, using silicon oxide as a mask, using The thermal couple silicon strip 10 is formed by dry etching, the strip width is ten to tens of microns, and the lengt...
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[0028] Example 2
[0029] Thermally oxidize a (100) single crystal silicon wafer to obtain a layer of silicon oxide with a thickness of 0.5 microns. Then, a layer of silicon nitride is deposited by LPCVD at a temperature of 800°C and a thickness of 0.15 microns to obtain a layer of "oxidized Silicon-silicon nitride" composite dielectric film. Then use LPCVD to deposit a layer of polysilicon with a thickness of 0.6 microns. After doping with boron, lithographically etch polysilicon strips and deposit metal aluminum on the surface to form a thermocouple pair with polysilicon. When the structure is finally corroded, KOH is used for corrosion to obtain a thermal reactor structure. The remaining processes are the same as in Example 1.
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