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Method for crystallizing silicon layer

A technology of crystalline silicon and amorphous silicon layers, applied in transistors, optics, instruments, etc., can solve problems such as the deterioration of electron mobility and uniformity of the silicon layer

Inactive Publication Date: 2002-06-12
PT PLUS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electron mobility and uniformity of the silicon layer deteriorates because the polysilicon layer constitutes an active layer with typical dimensions of 2-20 μm, usually including one or more grain boundaries

Method used

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  • Method for crystallizing silicon layer
  • Method for crystallizing silicon layer

Examples

Experimental program
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Effect test

Embodiment 1

[0054] 8a to 8g are schematic diagrams of the manufacturing process of TFT after crystallization of amorphous silicon according to the present invention.

[0055] 8a and 8a are respectively a cross-sectional view and an explanatory state view. A bottom insulating layer 81 and an amorphous silicon layer 82 of appropriate thickness are formed on a glass substrate, and a layout of a desired shape is formed. The purpose of forming the bottom insulating layer is to avoid diffusion contamination of the silicon layer when forming the TFT active layer. However, depending on circumstances, a thin layer of amorphous silicon may be directly formed on the substrate without the bottom insulating layer 81 . Amorphous silicon is formed using methods such as low-pressure CVD (Chemical Vapor Deposition), high-pressure CVD, and plasma-enhanced CVD, and the like. The amorphous silicon layer 82 is formed on the substrate by means of the use of a masked photoresist to form a crystalline source la...

Embodiment 2

[0068] Figure 9 is a partial cross-sectional view describing another method of manufacturing a TFT according to the present invention. In the previous embodiment described with reference to Figures 8a-8g, the polysilicon source region 83, the crystalline filter channel 84 and the active layer 85 were formed using a pattern on the polysilicon layer 82, and the MIC source metal layer 87 was It is formed to cover part of the crystalline source region 83, as shown in FIG. 8a and FIG. 8a'. However, in Figure 9 In an embodiment of the present invention, the MIC source metal 94 is first formed on the bottom insulating layer 81, and the amorphous layer 82 is deposited thereon. The amorphous silicon layer is then patterned to create crystalline source regions 95, crystalline filter channels 96 and active regions 97, respectively.

[0069] Obviously, if Figure 9 If the structure is thermally crystallized as described in Embodiment 1, the same effect as described in Embodiment 1 a...

Embodiment 3

[0071] Although Embodiment 1 deposits the MIC source metal 87 on the MIC region 86 of the crystalline source region 83, it is also possible to implant the MIC source metal into the MIC region. By using a photoresist mask to form a source metal implant in the crystalline source region exposing only the MIC region 86, the MIC source metal such as Ni can be implanted only in the MIC region. After metal implantation, the photoresist mask is removed. Then, a TFT having a crystalline active layer can be fabricated by the same process as in the above-mentioned related embodiment 1.

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Abstract

The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Description

technical field [0001] The present invention relates to thin film transistors (TFTs) for use in liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and three-dimensionally integrated semiconductor devices or the like, and more particularly to a method of crystallizing an active layer using crystal filtering techniques to A source region, a drain region and a channel region of a thin film transistor (TFT) are formed. background of the invention [0002] According to the present invention, the active layer of a TFT can be crystallized into monocrystalline silicon by filtering out crystal components with a uniform crystallographic orientation from the polycrystalline region, which is metal-induced lateral crystallization (MILC) caused by the MIC source metal. form. [0003] Generally, the fabrication of amorphous silicon transistors for display devices (such as LCD and OLED) is to form gate electrodes on transparent glass or quartz substrates, deposit gate o...

Claims

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Application Information

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IPC IPC(8): G02F1/1368G02F1/136H01L21/20H01L21/26H01L21/265H01L21/268H01L21/336H01L27/12H01L29/786
CPCH01L29/66757H01L27/1214H01L29/78675H01L27/1281H01L21/2022H01L29/78609H01L27/12H01L21/02686H01L21/02488H01L21/02422H01L21/02532H01L21/02672H01L21/02691G02F1/136H01L21/02595
Inventor 朱承基李石运
Owner PT PLUS CO LTD
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