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Chemical vapor deposition system and method

A technology of chemical vapor deposition and chemical vapor, which is applied in the field of belt-driven atmospheric pressure chemical vapor deposition system, can solve the problems of particles polluting the substrate, limiting the processing capacity of the substrate, sediment fragmentation or peeling, etc.

Inactive Publication Date: 2002-06-19
SEMICON EQUIP GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] A disadvantage of conventional APCVD systems is that deposition occurs not only on the substrate, but also on components of the system itself. One problem caused by deposits on APCVD system components is that the deposits tend to crumble or Exfoliation, producing particles that may contaminate the substrate
The need for such frequent, aggressive and time-consuming decontamination limits the superior substrate processing capabilities of APCVD systems

Method used

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  • Chemical vapor deposition system and method
  • Chemical vapor deposition system and method
  • Chemical vapor deposition system and method

Examples

Experimental program
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Effect test

Embodiment 1

[0037] In a first embodiment, the Pyromet  The conveyor belt 105 made of 601 was processed to prepare an anti-oxidation coating 175 comprising a nickel aluminide layer 180 and an aluminum oxide layer 185 with an average thickness of about 5 μm. The conveyor belt 105 is then installed in an APCVD system and dielectric, passivation, and dopant layers are deposited on the semiconductor wafer using various methods at about 450-550°C. A typical MTBME for such an APCVD system 100 using an uncoated belt for such work is about 150 hours. Although, for reasons unrelated to the conveyor belt 105, the APCVD system 100 was taken out of service at 330 hours, subsequent measurements of the deposits on the conveyor belt and the accumulation of particles on the muffle floor 145 indicated that no further maintenance was required at this time. The muffle furnace is pickled. This example therefore demonstrates that the anti-oxidation coating 175 of the present invention can increase MTBME by ...

Embodiment 2

[0039] In the second example, in another Pyromet  An anti-oxidation coating 175 having a pre-oxidized nickel aluminide layer 180 with an average thickness of about 5 μm was prepared on the conveyor belt 105 made of 601. Then, the conveyor belt 105 is installed in another APCVDA system located at the user's site, and the APCVD system is operated to deposit a layer of undoped carbon dioxide on the semiconductor wafer using TEOS (tetraethylorthosilicate) at about 400°C. miscellaneous glass. A typical MTBME for the APCVD system 100 using a standard uncoated delivery is about 250 hours. While the coated conveyor belt 105 was installed, although a first muffle pickling was done at 500 hours at the customer's request, again, there was no indication that this was required.

Embodiment 3

[0041] In a third example, the same conveyor belt 105 and APCVD system 100 as used in Example 2 had been run for 1000 hours prior to testing and, again, there was no indication that a muffle pickling was required. The typical MTBME for this system with a standard uncoated belt is 250-280 hours. An APCVD system 100 employing a conveyor belt 105 with an anti-oxidation coating 175 has been run continuously for more than 2000 hours without muffle pickling, where the muffle pickling is performed for reasons not related to the conveyor belt, film uniformity, or particles s reason. This example illustrates an increase in MTBME of over 600% compared to the uncoated belt. Furthermore, this example also demonstrates that the anti-oxidation coating 175 is capable of withstanding the rigors of continuous CVD operations as well as the severe treatment of the muffle furnace pickling step.

[0042] As demonstrated by the above examples, the APCVD system 100 having the conveyor belt 105 wit...

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PUM

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Abstract

A chemical vapor deposition(CVD)system is provided for processing a substrate(110). The system(100)includes a heater muffle(115), a chamber(120)having an injector assembly(130)for introducing chemical vapor to process the substrate(110), and a belt(105)for moving the substrate through the muffle and chamber. The belt(105)has an oxidation-resistant coating(175)to reduce formation of deposits thereon. The coating(175)is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating(175)comprises a securely-adhered oxide layer(185)that is substantially free of transition metals. Preferably, the oxidation-resistant coating(175)comprises aluminum oxide. More preferably, the coating(175)comprises an aluminum oxide layer(185)securely adhered over a nickel aluminide layer(180).

Description

[0001] Cross-references with related applications [0002] This application claims priority to US Provisional Patent Application Serial No. 60 / 130,783, filed April 23, 1999, which is incorporated herein by reference. field of invention [0003] The present invention relates generally to chemical vapor deposition systems and, more particularly, to belt driven atmospheric pressure chemical vapor deposition systems including a conveyor belt having an oxidation resistant coating to reduce deposit formation thereon. Background of the invention [0004] Chemical vapor deposition (CVD) systems or reactors are well known and widely used to deposit or grow thin films of various compositions on substrate surfaces. For example, CVD systems are commonly used to deposit dielectric, passivation and dopant layers on semiconductor wafers. CVD systems operate by feeding process gases or chemical vapors into a process chamber in ...

Claims

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Application Information

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IPC IPC(8): B05D3/10B01J19/00C23C10/48C23C16/44C23C16/54C23C28/00C23C30/00
CPCC23C28/345C23C28/321C23C16/54C23C16/4404
Inventor R·J·巴雷L·H·麦克尔T·E·肯
Owner SEMICON EQUIP GROUP