Metal oxie thin films for high dielectric constant applications

A high dielectric constant, oxide film technology, used in tantalum compounds, circuits, inorganic chemistry, etc.

Inactive Publication Date: 2002-07-10
SYMETRIX +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such scaling defects can place demanding processing requirements that are difficult to meet and require large-scale design of circuits as they become more densely processed

Method used

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  • Metal oxie thin films for high dielectric constant applications
  • Metal oxie thin films for high dielectric constant applications
  • Metal oxie thin films for high dielectric constant applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] A series of p-type 100 Si wafer substrates 51 were oxidized to form a silicon dioxide layer 52 . The substrate was dehydrated in a vacuum oven at 180°C for 30 minutes. An adhesion layer 54 consisting mainly of titanium and having a thickness of 20 nm was sputter deposited on the substrate using an argon atmosphere, a pressure of 8 mTorr, and 0.53 amps. Then, a platinum bottom electrode 55 was deposited to a thickness of 300 nm under the same sputtering conditions. Next, these bottom electrodes were pre-annealed at 650° C. for 30 minutes using 10 minutes push-pull in oxygen flowing at 6 1 / m. Dehydrate and bake in a vacuum oven at 180°C for 30 minutes.

[0068] Prepare a series of 0.25mol(Ba x Sr 1-x ) Ta 2 Precursor solutions in which the stoichiometric amounts of barium and strontium differ, corresponding to x values ​​of 0.0-1.0 in intervals of 0.1. These solutions were diluted to 0.15M using n-butyl acetate solvent. On each test wafer corresponding to a particu...

Embodiment 2

[0074] Prepare test capacitor according to the method of embodiment 1, but use stoichiometric formula as (Ba x Sr 1-x ) 2 Ta 2 o 7 The precursor solution of the metal oxide material, wherein the value of x is between 0.0-1.0 with an interval of 0.1.

[0075] Measurement and calculation were performed in the same manner as in Example 1. The material is also not a ferroelectric material. The results are shown in Table 2. The experimental value of Vcc is effectively zero for all values ​​of x. Tcc values ​​are about 100 or less for x values ​​as high as about 0.6. In this range, when x=0.6, ε 20 The maximum value is about 40. At x=0.9, ε 20 The value is about 60, and the Tcc is about 180. Therefore, (Ba of the present invention x Sr 1-x ) 2 Ta 2 o 7 - The test values ​​of the material meet the requirements for Vcc and Tcc at 5 volt operation as well as at 3 volt operation.

[0076] capacitor

Embodiment 3

[0078] Prepare test capacitor according to the method of embodiment 1, but use stoichiometric formula as (Ba x Sr 1-x ) 2 Bi 2 Ta 2 o 10 The precursor solution of the metal oxide material, wherein the value of x is between 0.0-1.0 with an interval of 0.1. According to the present invention, the composition of the liquid precursor and the resulting film can be regarded as a pyrochlore-type oxide (Ba x Sr 1-x ) 2 Ta 2 o 7 and Bi 2 o 3 The combination.

[0079] Measurement and calculation were performed in the same manner as in Example 1. The material is also not a ferroelectric material. The results for x in the range of 0≤x≤0.7 are shown in Table 3.

[0080] capacitor

[0081] The experimental value of Vcc is effectively zero for all values ​​of x. Tcc values ​​are about 100 or lower for all values ​​of x up to about 0.8. In this range, ε when 0.4≤x≤0.8 20 The maximum value is about 60. Therefore, (Ba of the present invention x Sr 1-x ) 2 Ta 2 Ta...

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Abstract

A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulae AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6,where 0</=x</=1.0 and 0</=y</=1.0; (BaxSr1-x)2(TayNb1-y)2O7, where 0</=x</=1.0 and 0</=y</=1.0; and(BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0</=x</=1.0 and 0</=y</=1.0. Thin films according to the invention have a relative dielectric constant >/=40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000ppm, preferably <100.

Description

field of invention [0001] The present invention generally relates to optimal stoichiometry of metal oxide materials in integrated circuits that exhibit high dielectric constant, capacitance and other electrical properties that are substantially independent of voltage and temperature. Background technique [0002] It is well known that there is a need for a material with a high dielectric constant to be suitable for use as a charge storage medium in integrated circuits and related fields, such as bypass capacitors in microwave monolithic integrated circuits (MMICs). The most commonly used dielectric for storing charge in integrated circuits is silicon dioxide, which has a dielectric constant of about 4. Other common dielectrics for charge storage such as Si 3 N 4 、Al 2 o 3 and Ta 2 o 5 , also has a low dielectric constant of 4-20. Storage capacitors using this material must have a large area in order to provide the capacitance required in prior ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G35/00G11C11/22H01L21/314H01L21/316H01L21/822H01L21/8242H01L21/8246H01L21/8247H01L27/04H01L27/06H01L27/105H01L27/108H01L29/78H01L29/788H01L29/792
CPCH01L27/0629H01L21/31691G11C11/22H01L29/78391G11C11/223H01L21/02197H01L21/02205H01L21/02282H01L27/10
Inventor 林信一郎维克拉姆·乔希纳拉亚恩·索拉亚潘约瑟夫·D·库奇阿罗卡洛斯·A·帕斯德阿劳约
Owner SYMETRIX
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