Polishing composition and its polishing method

A technique of polishing composition and organic compound, which is applied in the field of polishing, and can solve the problems of long polishing time, inability to obtain sufficient inhibition of chemical erosion, and inability to adequately inhibit the formation of pits in copper wiring.

Inactive Publication Date: 2003-02-26
FUJIMI INCORPORATED
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, the results of experiments conducted by the present inventors have confirmed that a wafer patterned with copper wires is polished using a polishing composition containing only abrasives, glycine, and hydrogen peroxide, the effect of chemical attack on copper and the abrasiveness on the copper surface after polishing will be noticeable and may form deep pits on the copper section
In addition, in order to inhibit the corrosion on the copper surface, when benzotriazole, which has the effect of inhibiting the chemical corrosion of copper, is added, if the amount of benzotriazole added is too large, the grinding rate of the copper layer will be too low, and the polishing It takes a long time, so it's not efficient
On the other hand, when the amount of benzotriazole added is too small, the effect of inhibiting chemical attack can not be obtained sufficiently, and thus the formation of pits on the copper wiring portion cannot be sufficiently inhibited.
[0014] According to experiments conducted by the present inventors, it was found that when a copper wire is polished using a polishing composition containing an abrasive, glycine, benzotriazole, and water as described in Prior Art 1, the formation of pits on the copper wiring portion is sufficiently suppressed while not providing sufficient copper removal rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition and its polishing method
  • Polishing composition and its polishing method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0072]The preparation method of the polishing composition of the present invention is to dissolve or disperse the above-mentioned components in water, that is, at least one abrasive agent selected from silicon dioxide and aluminum oxide; at least one abrasive agent selected from polyethylene oxide, polyepoxide Organic compounds of propane, polyoxyethylene alkyl ethers, polyoxypropylene alkyl ethers, polyoxyethylene polyoxypropylene alkyl ethers, and polyoxyalkylene addition polymers having C≡C triple bonds represented by formula (1): where R 1 -R 6 Each is H or C 1-10 Alkyl, each of X and Y is ethyleneoxy or propyleneoxy, each of m and n is a positive integer of 1-20; at least one selected from citric acid, oxalic acid, tartaric acid, glycine, α-alanine and histidine A polishing-accelerating compound of an acid; at least one corrosion inhibitor selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, and tolyltriazole; and hydrogen peroxide. ...

Embodiment 1-57 and comparative example 1-8

[0090] Preparation and Components of Polishing Compositions

[0091] Colloidal silica with an average particle size of 40 nm was used as an abrasive, glycine was used as a compound to accelerate polishing, benzotriazole was used as an anti-corrosion agent, hydrogen peroxide and various types of organic compounds shown in Table 1 were mixed with water , so that they were blended in the ratio shown in Table 1 to prepare various polishing compositions in Examples 1-57 and Comparative Examples 1-8.

[0092] In Examples 1-17, ethylene glycol, polyethylene oxide, polypropylene oxide, polyoxyethylene alkyl ether, polyoxypropylene alkyl ether or polyoxyethylene polyoxypropylene alkyl ether was used as the organic compound , change its molecular weight and dosage, and the contents of other components, namely colloidal silicon dioxide, glycine, benzotriazole and hydrogen peroxide are the same respectively.

[0093] In Examples 18-53, polyethylene oxide (molecular weight 400) or polyoxy...

Embodiment 61-101 and comparative example 9-10

[0120] Preparation and Components of Polishing Compositions

[0121] The colloidal silica with an average particle size of 40nm is used as an abrasive, glycine as a compound for accelerating polishing, benzotriazole as an anti-corrosion agent, hydrogen peroxide and various types shown in Table 2 as an organic compound (organic compound 1 and 2), mixed with water, and mixed according to the ratio shown in Table 2, to prepare the polishing compositions in Examples 61-101 and Comparative Examples 9-10.

[0122] In embodiment 61-73, used two types of organic compounds, namely organic compound 1 is the diisobutyl dimethyl butynediol polyoxyethylene ether represented by chemical formula (3): Organic compound 2 is polyoxyethylene polyoxypropylene alkyl ether (molecular weight: 8000), and their usage amounts were changed, and other components, namely colloidal silica, glycine, benzotriazole, and hydrogen peroxide were the same, respectively.

[0123] In Examples 74-97, the same amou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to view more

Abstract

A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C IDENTICAL C triple bond, represented by the formula (1): <CHEM> wherein each R1 to R6 is H or a C1-10 alkyl group, each X and Y is an ethylene-oxy group or a propylene-oxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, alpha -alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.to

Description

technical field [0001] The present invention relates to a polishing composition for polishing substrates of semiconductors, photomasks and various storage hard disks, in particular to a polishing composition for polishing the surface of device wafers in the semiconductor industry to make it flat. [0002] More specifically, the present invention relates to a polishing composition which is highly efficient, highly selective, and usable in the process of processing device wafers in the polishing step of applying the so-called chemical mechanical polishing technique to semiconductor devices. to form an excellent polished surface; also relates to a polishing method using the composition. Background technique [0003] So-called high-tech products including computers have progressed greatly in recent years, and components for these products, such as ULSI devices, have been developed year by year in order to achieve high integration and high speed. Along with these developments, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/02C09K3/14C23F3/06H01L21/304
CPCC09G1/02H01L21/3212C23F3/06C09K3/1463C09K3/14
Inventor 酒井谦儿玉井一诚北村忠浩松田刚伊奈克芳
Owner FUJIMI INCORPORATED
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap