Manufacturing method for semiconductor gas-sensing device of testing carbon dioxide

A gas sensor, nitrogen dioxide technology, applied in electrical components, electrical solid devices, circuits, etc., can solve problems such as difficult to measure, low concentration, and inability to detect on-site, and achieve rapid detection, simple process, and low cost. Effect

Inactive Publication Date: 2003-06-18
SHANGHAI UNIV
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Problems solved by technology

Due to the low concentration, ordinary semiconductor sensors are difficult to detect
At present, large-scale instrument analysis methods such as chromatography are usually used to detect low-concentration nitrogen dioxide. Although the accuracy is high, the speed is slow, and it

Method used

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  • Manufacturing method for semiconductor gas-sensing device of testing carbon dioxide
  • Manufacturing method for semiconductor gas-sensing device of testing carbon dioxide
  • Manufacturing method for semiconductor gas-sensing device of testing carbon dioxide

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Embodiment Construction

[0015] Now in conjunction with accompanying drawing and embodiment the present invention is further described in the back: Embodiment one: adopt ultrasonic spray pyrolysis method to prepare deposition indium tin oxide thin film (ITO) on quartz substrate, its preparation method is: utilize special-made device, can see figure 1 , first take 0.01mol of analytically pure metal indium, dissolve it in 20ml of nitric acid solution, the concentration of nitric acid is 1mol / l, and form an indium nitrate solution, then add tin tetrachloride, and the addition amount is controlled at Sn:In=5:100 molar ratio , that is, add 0.0005 mol of analytically pure tin tetrachloride, after it is completely dissolved, add deionized water until the volume of the solution is 100ml, and this solution is the reaction solution. Place the container 6 containing the reaction solution on the ultrasonic oscillator 7 to atomize the reaction solution; use nitrogen as the carrier gas, nitrogen is fed from the ca...

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Abstract

A gas-sensitive element of semiconductor sensor for detecting NO2 gas is an indium tin oxide film on quartz substrate having Au electrodes and heating layer of ruthenium oxide resistor. Its preparing steps includes dissolving indium in nitric acid, adding SnCl4, diluting with deionized water to obtain reaction liquid, loading said quartz substrate in tubular furnace, atomizing said reaction by ultrasonic oscillator, carrying the atomized reaction liquid into tubular furnace by N2, and spraying it toward quartz substrate. It has high sensitivity.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor sensor gas sensor for detecting nitrogen dioxide, belonging to the field of sensor technology and semiconductor sensor manufacturing. Background technique [0002] A semiconductor gas sensor refers to a gas sensor made of semiconductor materials plus electrodes and heating resistors. Semiconductor materials generally use tin dioxide, zinc oxide, iron oxide, and the like. Due to the change of the ambient gas composition, the electrical properties of the semiconductor gas sensor change, and the type and concentration of the gas present in the environment are detected by measuring the resistance of the semiconductor gas sensor. [0003] As we all know, nitrogen dioxide is the main air pollutant gas. Due to the low concentration, ordinary semiconductor sensors are difficult to detect. At present, large-scale instrument analysis methods such as chromatography are usually used to detect lo...

Claims

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Application Information

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IPC IPC(8): G01N27/12H01L49/00
Inventor 焦正吴明红顾建中俎建华
Owner SHANGHAI UNIV
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