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Method for cleaning plasma processing device

A processing device and plasma technology, applied in cleaning methods and appliances, chemical instruments and methods, metal material coating technology, etc., can solve the problem that deposits cannot be completely removed

Inactive Publication Date: 2003-10-01
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the above-mentioned conventional methods of cleaning, the pure chemical cleaning step cannot completely remove the deposits formed on the minute parts of the element to be cleaned, such as its edge parts

Method used

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  • Method for cleaning plasma processing device
  • Method for cleaning plasma processing device
  • Method for cleaning plasma processing device

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Experimental program
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Embodiment Construction

[0025] specific implementation plan

[0026] Referring to the accompanying drawings, embodiments of the present invention will be explained below:

[0027] figure 2 is a schematic structural view of the etching device, wherein 1 indicates an aluminum cylindrical vacuum chamber, and its inside is airtight, which is a plasma etching chamber.

[0028] The vacuum chamber 1 has a trapezoidal cylindrical shape, has an upper portion 1a with a smaller diameter, and a lower portion 1b with a larger diameter, and is electrically grounded. Further, here, a support table (receiver) 2 for supporting a semiconductor wafer W as a substrate to be processed is provided inside the vacuum chamber 1, with its surface to be processed positioned upward and almost horizontally.

[0029] The support table 2 is made of, for example, aluminum, and is supported by a support base 4 via an insulating plate 3 such as a ceramic plate. Further, here a focus ring 5 made of conductive or insulating materia...

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PUM

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Abstract

The present invention provides a method for thoroughly cleaning deposits on the surface of components to be cleaned in a plasma processing device without damaging any anode coating or spray coating that has been formed on the surface of the components to be cleaned. This cleaning method includes a chemical cleaning step (a) of immersing in an organic solvent (such as acetone); followed by a step (b) of blowing in compressed air to remove deposits that have been detached from the chemically treated buffer plate (14); , by using a CO2 blowing device (105) to physically remove the sediment remaining on the edge of the buffer plate (14), and immersing the buffer plate (14) in pure water (104), and giving ultrasonic vibration to remove the sediment remaining on the buffer plate (14) ) on the sedimentation step f.

Description

technical field [0001] The present invention relates to a method of cleaning deposits formed during, for example, plasma etching of a silicon oxide coating by using CF series gases, and a plasma processing device cleaned by this method. Background technique [0002] In the manufacture of microstructures of semiconductor devices, plasma processing devices have been frequently employed for etching desired locations of semiconductor devices. [0003] In such an etching apparatus, deposits formed during an etching process in which a silicon oxide coating is etched by using an etching gas containing fluorine gas such as a CF series compound are frequently formed and accumulated in an etching chamber. Therefore, cleaning of such etching device deposits must be performed periodically. [0004] Prior art etching devices for cleaning have used chemical cleaning with a cleaning liquid such as an organic solvent, or selectively physical cleaning such as water jets, air jets, and the l...

Claims

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Application Information

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IPC IPC(8): C23C16/44B08B7/04B24C1/00H01L21/3065
CPCB08B7/04B24C1/003Y10S134/902
Inventor 高濑均长山将之三桥康至中山博之
Owner TOKYO ELECTRON LTD
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