Contact portion of semiconductor device and thin film transistor array panel for display device including the contact portion

Abstract

A gate wire is formed on a substrate. Next, after forming a gate insulating film, a semiconductor layer and an ohmic contact layer subsequently are formed thereon. Next, a data wire is formed. Next, a passivation layer and an organic insulating film are deposited, and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Here, the organic insulating film around the contact holes is formed thinner than that in the other portions. Next, the organic insulating film around the contact holes is removed by an ashing process to expose the borderline of the passivation layer in the contact holes, thereby removing an under-cut. Then, a pixel electrode, an assistant gate pad and an assistant data pad respectively connected to the drain electrode, the gate pad and the data pad are formed.

Description

technical field [0001] The present invention relates to a contact part of a semiconductor device and a manufacturing method thereof, and a thin film transistor array panel for a display including the contact part and a manufacturing method thereof. Background technique [0002] Generally, it is better to optimize the area of ​​the semiconductor device and arrange its wiring in multiple layers when the semiconductor device is highly integrated. In this case, it is preferable that the interlayer insulating film is made of a material having a low dielectric constant so that the interference of the signal transmitted through the wiring is minimized, and the wiring transmitting the same signal is realized through a contact hole formed in the insulating film. electrical connection. However, if an under-cut occurs on the contact portion when the contact hole is formed by etching the insulating film, the step coverage of the contact portion becomes poor. Therefore, there is a prob...

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