High temperature metal boat and method of plating tin doped indium oxide transparent condutive membrane

A technology of transparent conductive film and tin-doped indium oxide, which is applied in metal material coating process, sputtering plating, vacuum evaporation plating, etc., can solve the problem that affects the stability of the plating process and does not form a process flow with industrial value and other issues, to achieve good market prospects and application value, good chemical stability, and easy control effects

Inactive Publication Date: 2004-07-21
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the phase corrosion characteristics of indium tin oxide and boats made of conventional materials, the stability of the plating process will be seriously affected, and at the same time, many uncontrollable impurities will be brought to the film.
Therefore, there is no process flow with industrial value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High temperature metal boat and method of plating tin doped indium oxide transparent condutive membrane
  • High temperature metal boat and method of plating tin doped indium oxide transparent condutive membrane
  • High temperature metal boat and method of plating tin doped indium oxide transparent condutive membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] see first figure 1 , figure 1 It is a schematic structural diagram of the high-temperature evaporation boat made of tantalum sheets in the present invention. The present invention uses tantalum sheets that have been annealed at a high temperature of 900--1200°C to make the evaporation boat; the thickness of the tantalum sheets is 3mm.

[0021] The evaporation boat is made of tantalum; the evaporation boat is a long ark, and the relationship between its size and structure is:

[0022] The total length of the evaporation boat, including the two fins, is (88±3)mm,

[0023] The length of the boat tank: depth: width = (45 ± 2) mm: 10 ± 3) mm: (24 ± 3) mm,

[0024] The thickness of the tantalum sheet is 3mm.

[0025] The size change range of the above boat has been proved to be valid data through experiments. According to our experimental results, if the depth is small, the heat gathering performance of the whole boat is poor. Therefore, if we want to obtain enough heat to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

A high-temp motel evaporator with two fins (45+ / -2)X(10+ / -3)X (24+ / -3) mm is made of the tantalum plate and annealed at 900-1200 deg.C. A method for evaporating the transparent film of Sn-doped indium oxide features that its current for evaporating is 150-200 A, the aerated oxygen is 12+ / -2 seem, its vacuum level is (0.9-1)X10 to the power -2 Pa, and its baking temp for bottom is 280+ / -20 deg.C.

Description

technical field [0001] The invention relates to a vacuum coating technology, in particular to a high-temperature metal boat and a method for plating a tin-doped indium oxide transparent conductive film by using the high-temperature metal boat. Background technique [0002] Tin-doped indium oxide (In 2 o 3 : Sn, namely ITO) oxide semiconductor thin film has excellent conductivity, high transmittance in the visible region and reflectivity in the infrared region, and has good adhesion and stability to the substrate. Therefore, it has been widely used in liquid crystal and plasma flat panel display devices, solar cell photovoltaic panels and electrode materials in special windows, and other optoelectronic fields. [0003] The preparation methods of ITO thin films mainly include the following types: electron beam evaporation, chemical vapor deposition, reactive ion implantation, and magnetron sputtering. Among them, the sputtering method is widely used because of its good cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/26
Inventor 徐学科范正修汤兆胜邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap