Polyorganosiloxane and preparing method for photoresist composition containing the said polyorganosiloxane

A photoresist and silane compound technology, which is applied in the field of diamine reagents, can solve the problems of increased resist thickness variation and reduced quality of electronic components

Inactive Publication Date: 2004-09-08
SHIPLEY CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main disadvantage of using a thin resist layer is that as the feature size becomes smaller, the variation in the thickness of the resist that diffuses over the substrate and into the etched pattern through the diffusion step increases
So, in a single layer resist system, lack of control over the size of the wafer will result in different line widths in the resist, degrading the quality of electronic components

Method used

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  • Polyorganosiloxane and preparing method for photoresist composition containing the said polyorganosiloxane
  • Polyorganosiloxane and preparing method for photoresist composition containing the said polyorganosiloxane
  • Polyorganosiloxane and preparing method for photoresist composition containing the said polyorganosiloxane

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0111] Embodiment 1: the synthesis of polymer

[0112] A solution of known content of 1,4-phenylenediamine, triethylamine and excess THF was added dropwise to a three-necked flask containing -15 known content of alkyl-substituted trichlorosilane. The solution was stirred at low temperature (-15) for 30 minutes, then known amounts of water and triethylamine and THF were added dropwise at -5. The mixture was stirred for a further 3 hours at this temperature, then washed to neutral with water and dried over anhydrous sodium sulfate overnight.

[0113] The final solution from the above reaction was stirred at 50° C. for 72 hours in the presence of molecular sieves (4 Angstroms) and a catalytic amount of triethylamine. After 72 hours, the polymer solution was washed neutral with water and the solvent was distilled off. The solid polymer was dissolved in a minimum amount of THF and precipitated in water (twice) and dried under vacuum at 50 for 24 hours.

Embodiment 2

[0114] Example 2: Photoresist Preparation and Lithographic Processing

[0115] A preferred bilayer resist composition is prepared and processed as follows

[0116] top floor

[0117] The top resist was formulated at 10% by weight solids. The following components are mixed to provide a resist composition: polymer, base additive, surfactant, and photoacid generator components.

[0118] The polymer, base additive (Troger's base) and surfactant (RO-8 surfactant) were added as a solution in propylene glycol methyl ether acetate (PGMEA). A solution of photoacid generator in ethyl lactate was added. The final solvent blend of the formulated resist was 90:10 v / v PGMEA:ethyl lactate. The polymer was prepared as in Example 1 above. The photoacid generator component consisted of 6.5% by weight of MDT on total solids (all resist components except solvent) and 2.9% by weight of tert-butylphenyldiphenyltrifluorophenylsulfonate based on total solids Matte composition. The base addit...

Embodiment 3

[0123] Embodiment 3: the synthesis of polymer

[0124] Part 1: Acetylation of NB-HF-OH(A)

[0125] Step 1: Acetylation of NB-HFOH

[0126]

[0127]NB-HFOH(A) alkenes were acetylated using anhydrides in the presence of dimethylaminopyridine (DMAP) in tetrahydrofuran (THF) at room temperature. Olefin conversion was monitored by gas chromatography (GC). The reaction became complete (>99%) within 4 hours. After the reaction, THF was distilled off, and the crude viscous oil was dissolved in dichloromethane and extracted with sodium bicarbonate solution, followed by washing with water until the solution became neutral. The dichloromethane layer was separated and evaporated in vacuo to give the product NB-HFOAc (B) as a clear viscous oil. use 1 H. 13 C. 19 FNMR Characterization B.

[0128] Part 2. Hydrosilylation of NB-HFOAcB:

[0129] Step 2: Hydrosilylation of NB-HFOAc

[0130]

[0131] Karstedt's catalyst (Pt 0 ), with HSiCl 3 Compound B was hydrosilylated for 36...

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Abstract

The present invention relates to polysiloxane and the synthesis of photoresist containing the said polysiloxane. The synthesis process of the present invention includes using polymerizing template reagent with several reactive nitrogen-containing radicals, especially diamine reagent.

Description

technical field [0001] The present invention relates to a novel synthesis of polysiloxanes (silsesquioxanes) and photoresist compositions containing said polysiloxanes. The synthetic method of the present invention involves the use of polymeric templating reagents, particularly diamine reagents, having multiple reactive nitrogen-containing groups. Background technique [0002] Photoresists are light-sensitive films used to transfer images to substrates. A coating of photoresist is formed on the substrate, and the photoresist coating is subsequently exposed to an active radiation source through a light shielding film. The light shielding film has regions that are opaque to the activating radiation and other regions that are transparent to the activating radiation. Exposure to the activating radiation results in a photoinduced chemical change of the photoresist coating, thereby transferring the image of the opacifying film onto the photoresist-coated substrate. After exposu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/06G03F7/075
Inventor G·G·巴克利S·卡纳加萨巴帕森M·A·京
Owner SHIPLEY CO INC
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