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Adjustable conductance limiting aperture for ion implanters

An ion implanter and slot technology, applied in semiconductor/solid-state device manufacturing, discharge tubes, instruments, etc., can solve problems such as release

Inactive Publication Date: 2004-10-06
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

None of the prior art methods fully satisfactorily solves the problem of outgassing from photoresist-covered wafers during ion implantation

Method used

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  • Adjustable conductance limiting aperture for ion implanters
  • Adjustable conductance limiting aperture for ion implanters
  • Adjustable conductance limiting aperture for ion implanters

Examples

Experimental program
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Embodiment Construction

[0020] The operation and structure of ion implanters are well known to those skilled in the art. A simplified schematic block diagram of an ion implanter in the prior art is shown in FIG. 1 . The ion source 10 directs the ion beam 12 along the beam path to a target 14, which is typically a semiconductor wafer. The ion beam 12 is deflected and focused by a mass analysis magnet 20 . The ion beam is focused on the face of the mass resolving slit assembly 22 . Various fracture assembly configurations are known, including the rotating cylinder configuration in US Pat. No. 5,629,528, as well as existing fracture assembly configurations disclosed in its Background section. The ion beam 20 is accelerated to the desired energy by the accelerator 24 and impinges on the target 14 located in the processing station 25 defining the target cavity 26 . The entire area between ion source 10 and target 14 is evacuated during ion implantation.

[0021] The ion beam 12 may be distributed over...

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PUM

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Abstract

A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Provisional Application No. 60 / 262,594, filed January 18, 2001, which is hereby incorporated by reference. technical field [0003] The present invention relates generally to the fabrication of semiconductor devices, and more particularly to reducing airflow from a photoresist-covered wafer into a beamline during ion implantation. Background technique [0004] In semiconductor device fabrication, the properties of silicon or other semiconductor wafers are altered by implanting a layer of dopant into the wafer using an ion implanter. Ion implanters are used to implant ions by generating and accelerating dopant ions and directing high-energy ions to the target wafer. By controlling the energy of the dopant ions, the penetration depth of these ions into the silicon wafer can be controlled. Common dopants include boron, phosphorus or arsenic. [0005] In an ion implanter, a source modu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q30/08H01J37/16H01J37/317H01L21/265
CPCH01J37/3171H01J2237/045H01J37/16H01J2237/188H01J37/30
Inventor 安东尼·丽奥埃里克·戴维·赫曼森杰·托马斯·施尤尔
Owner VARIAN SEMICON EQUIP ASSOC INC