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Apparatus for annealing of crystal with high temp. resistance

An annealing device and high-temperature resistant technology, applied in the field of crystal annealing devices and annealing devices for high-temperature oxide crystals, can solve the problems of uneven induction heating temperature, small volume of crystal annealing chamber, poor crystal annealing effect, etc., and achieve optical uniformity. The effect of improving the property and crystal integrity, improving the optical quality of the crystal, and stabilizing the temperature field

Inactive Publication Date: 2005-01-05
周永宗
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AI Technical Summary

Problems solved by technology

The intermediate frequency induction heating annealing furnace adopted in the world, although the induction heating temperature can reach above 2000 ℃, but its heating power is large, the volume of the crystal annealing chamber is small, the induction heating temperature is uneven, and the crystal annealing effect is not good

Method used

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  • Apparatus for annealing of crystal with high temp. resistance

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Embodiment Construction

[0009] The present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0010] like figure 1 A high-temperature-resistant crystal annealing device is shown, which includes being placed on a chassis 2 with a vacuum exhaust port 1, and is provided with a water inlet 31, a water outlet 6 and a vacuum pressure in sealing contact with the chassis 2 through a vacuum sealing ring. The bell jar 5 of Table 4 is provided with a thermal insulation shielding device including a side shielding cylinder 34, an upper thermal baffle 21 and a lower thermal baffle 30 in the bell jar 5. Its main feature is: There is an inflation valve 3 and an air outlet valve 32; the heating element 18 arranged on both sides of the innermost shielding cylinder 24 is made of tungsten rod, and the heating element 18 is fastened to the molybdenum nut 29 through the molybdenum electrode joint 27. Two molybdenum electrode plates 28; the two molybdenum ele...

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Abstract

The invention is a high temperature-resistant crystal annealing device, including a bell-jar, arranged on an underframe with vacuum vent, hermetically contacting with the underframe through vacuum seal ring, and provided with water inlet and outlet as well as air pressure meter, there is a heat-preserving screening device containing side screening tube and top and bottom heat baffles, arranged in the bell-jar body, there are air-inlet valve and air-outlet valve arranged on the bell-jar body; a heating body arranged in the innermost layer and on tow sides of the side screening tube is made of Wu bar and fastened on a Mo electrode plate through electrode contact; the Mo electrode plate is supported by corundum insulating ring bracket, where the two ends of the Mo electrode plate are both fastened on a water-cooled electrode plate; a space encircled by the heating body above the Mo electrode plate is provided with a crystal annealing room; there is a heat-insulating plate arranged inside the corundum insulating ring bracket under the Mo electrode plate. The invention can increase the factor of merit (FOM) value of high-doped Ti:sapphire laser crystal by a large margin and improve optical quality of high-temperature oxide crystal.

Description

technical field [0001] The invention belongs to the field of heat treatment of crystals, and relates to an annealing device for high-temperature oxide crystals, in particular to a high-temperature-resistant crystal annealing device. Background technique [0002] With the development of science and technology, the varieties of artificially bred crystals are constantly innovating. The crystals formed by molten slug have a large gradient temperature difference at the solid-liquid interface, and the bred crystals have large thermal stress and easy cracking during the production process of crystal elements; Some crystals have poor crystalline integrity. Patent number: ZL85100534.9 The invention patent provides "a high temperature resistant temperature gradient crystal growth device", which uses the guided temperature gradient method (abbreviation: temperature gradient method) to grow titanium-doped sapphire, sapphire and other crystals with a filamentous optical path, However, i...

Claims

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Application Information

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IPC IPC(8): C30B33/02
Inventor 周永宗
Owner 周永宗
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