Magnetoelectric composite film and its preparation method

A composite film and magnetoelectric composite technology, which is applied in the direction of the magnetism of inorganic materials, can solve problems that do not involve the measurement of the magnetoelectric effect of composite films, and achieve good ferroelectricity and ferromagnetism.

Inactive Publication Date: 2005-03-23
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, only H. Zheng and K.S. Chang et al. have successfully prepared CoFe by using two methods of laser pulse deposition (PLD) and "composition spreads". 2 o 4 -BaTiO 3 System magnetoelectric composite film, but their research did not involve the measurement of the magnetoelectric effect of the composite film

Method used

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  • Magnetoelectric composite film and its preparation method
  • Magnetoelectric composite film and its preparation method
  • Magnetoelectric composite film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: 0.5CoFe 2 o 4 -0.5PZT composite film

[0035] (1) Raw materials:

[0036] Cobalt acetate [Co(CH 3 COO) 2 4H 2 O], iron nitrate [Fe(NO 3 ) 3 9H 2 O], lead acetate [Pb(CH 3 COO) 2 ·3H 2 O], zirconium nitrate [Zr(NO 3 )·5H 2 O], butyl titanate [Ti(C 4 h 9 O) 4 ], ethylene glycol methyl ether, glacial acetic acid.

[0037] Platinum-coated silicon wafer (Pt / Ti / SiO 2 / Si).

[0038] (2) Preparation process:

[0039] a. Preparation of CoFe 2 o 4 Precursor solution:

[0040] Weigh 0.03mol cobalt acetate, 0.06mol ferric nitrate and 100ml ethylene glycol methyl ether. The preparation process is as follows: first put the weighed cobalt acetate and ferric nitrate into two beakers respectively, add 30ml and 50ml of ethylene glycol methyl ether, respectively, stir with a magnetic stirrer at 40°C until completely dissolved, and then put Mix the solutions in the above two beakers with each other and add the remaining ethylene glycol methyl ether. The mi...

Embodiment 2

[0057] Example 2: 0.33CoFe 2 o 4 -0.67PZT composite film

[0058] (1) Raw materials:

[0059] Cobalt acetate [Co(CH 3 COO) 2 4H 2 O], iron nitrate [Fe(NO 3 ) 3 9H 2 O], lead acetate [Pb(CH 3 COO) 2 ·3H 2 O], zirconium nitrate [Zr(NO 3 )·5H 2 O], butyl titanate [Ti(C 4 h 9 O) 4 ], ethylene glycol methyl ether, glacial acetic acid.

[0060] Platinum-coated silicon wafer (Pt / Ti / SiO 2 / Si).

[0061] (2) Preparation process:

[0062]a. Preparation of CoFe 2 o 4 Precursor solution:

[0063] Weigh 0.02mol cobalt acetate, 0.04mol iron nitrate and 100ml ethylene glycol methyl ether. The preparation process is as follows: first put the weighed cobalt acetate and ferric nitrate into the beaker respectively, add 25ml and 40ml of ethylene glycol methyl ether, respectively, stir with a magnetic stirrer at 45°C until completely dissolved, and then mix the above The solutions in the two beakers were mixed with each other and the remaining ethylene glycol methyl ether wa...

Embodiment 3

[0069] Example 3: 0.6CoFe 2 o 4 -0.4PZT composite film

[0070] (1) Raw materials:

[0071] Cobalt acetate [Co(CH 3 COO) 2 4H 2 O], iron nitrate [Fe(NO 3 ) 3 9H 2 O], lead acetate [Pb(CH 3 COO) 2 ·3H 2 O], zirconium nitrate [Zr(NO 3 )·5H 2 O], butyl titanate [Ti(C 4 h 9 O) 4 ], ethylene glycol methyl ether, glacial acetic acid.

[0072] Platinum-coated silicon wafer (Pt / Ti / SiO 2 / Si).

[0073] (2) Preparation process:

[0074] a. Preparation of CoFe 2 o 4 Precursor solution:

[0075] Weigh 0.04mol cobalt acetate, 0.08mol iron nitrate and 100ml ethylene glycol methyl ether. The preparation process is as follows: first, put the weighed cobalt acetate and ferric nitrate into two beakers respectively, add 30ml and 60ml of ethylene glycol methyl ether, respectively, stir with a magnetic stirrer at 50°C until completely dissolved, and then put Mix the solutions in the above two beakers with each other and add the remaining ethylene glycol methyl ether. The mix...

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Abstract

A composite magneto-electric film with magneto-electric effect and better ferromagnetic and ferroelectric properties is composed of the ferroelectric substrate of lead iron zirconate titanate, and the magnetic cobalt ferrite particles uniformly distributed in said substrate. Its preparing process is also disclosed.

Description

technical field [0001] The invention belongs to the field of electronic functional thin film materials, and relates to a composite thin film with magnetoelectric effect and a preparation method thereof, in particular to a functional thin film material composed of a ferroelectric material and a magnetic material, and a sol-sol of the composite thin film material. Gel (sol-gel) preparation method. Background technique [0002] The magnetoelectric effect is the dielectric polarization of a material under the action of a certain external magnetic field, or the magnetization under the action of an applied electric field. An important index to characterize the magnetoelectric effect of materials is the magnetoelectric voltage coefficient, which is defined as α E =dE / dH, where E is the electric field output of the material and H is the applied external magnetic field. The magnetoelectric effect has broad application prospects in high-performance magnetoelectric functional devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/49C04B35/491C04B35/624H01F1/34
Inventor 万建国刘俊明曾敏王广厚
Owner NANJING UNIV
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