Preparation of nanometer thin film

Abstract

The invention was involved in the preparation method of nanophase films in order to provide one method to produce nanophase films by using plasma chemical deposit. The process consist of the following steps: a) The reaction chamber was in the pre-vacuum state by using pumped vacuum system. b) The substrate temperature was to 300-380deg.C heated by the electric oven and the reaction chamber was hold in the pre-vacuum state. c) The highly pure hydrogen was put in to the reaction chamber and R.F AC supply was opened for 20-30 min after the chamber was stabilized. d) R.F AC supply and hydrogen source were turned off in order to assure that the vacuum degree was reverted to the primary state. e) The complex silane gas was flowed and the vacuum degree of the vacuum chamber was 1.0-1.5. f) After the above processes stabilized, R.F AC supply was re-openED and power supply was adjusted according to the micrograin size of deposit silicon film. g) When the glow of R.F stabilized, D.C power supply was opened and the direct current negative bias voltage was 200-300V to form nanophase film.

Description

technical field [0001] The invention relates to a preparation method of nanometer material. Background technique [0002] Nano-silicon film is a third type of solid material that is different from both crystalline and amorphous states, so it has a series of special properties. Its conductivity at room temperature is even hundreds of times higher than that of intrinsic single crystal silicon, and it has good temperature stability and a large pressure-sensitivity coefficient, which can be used as an excellent pressure sensor material. Due to its unique properties, scientific and technological workers in many countries in the world are working hard to find and study methods for preparing this material. So far, the method of making nanomaterials at home and abroad is to first evaporate the elements in an ultra-high vacuum system, condense them on a cold substrate into ultrafine particles of about several nm to tens of nm, and then condense the original p...

AI Technical Summary

Problems solved by technology

So far, the method of making nanomaterials at home and abroad is to first evaporate the elements in an ultra-high vacuum system, condense them on a cold substrate into ultrafine particles of about several nm to tens of nm, and then condense the original particles The bit is scraped off, and the pressure is applied to press it into a block material. In this method, the equipment is expensive, and it can only be pressed into a block material, and it is difficult to press it into a film.

For semiconductor materials germanium and silicon, only ultra-fine particles can be made at home and abroad, and they have not yet been compacted into materials.