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Preparation for self-supporting ordered through hole alumina film

A technology of aluminum oxide film and porous aluminum oxide, applied in the field of material chemistry, can solve the problems of restricting the industrial production of porous aluminum oxide film, complicated and complicated production process, high risk, etc. low cost effect

Inactive Publication Date: 2005-05-11
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The chemical corrosion stripping technology used in this method will introduce heavy metal impurity ions in the aluminum oxide film and lead to the widening of ordered film pores; recently, it has been reported to use ion sputtering for stripping, but this method requires expensive Specialized instrumentation, and chemical etching is still required to remove the aluminum substrate
Obviously, the production process of the above-mentioned alumina membrane preparation method is cumbersome and complicated, with high risks and high costs, thus limiting the industrial production of porous alumina membranes.

Method used

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  • Preparation for self-supporting ordered through hole alumina film
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  • Preparation for self-supporting ordered through hole alumina film

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Embodiment Construction

[0022] figure 1 The schematic diagram of the process of preparing self-supporting ordered through-hole aluminum oxide film in the present invention is given. A is the aluminum oxide film formed on the anodic aluminum substrate after the first electrochemical oxidation; B is after removing the aluminum oxide film in A. The anodized aluminum substrate, the concave shape left is the nucleation center of the second aluminum anodic oxidation, which acts as an inducer to improve the order degree of the aluminum oxide film pore distribution; C is the order generated after the second anodic oxidation Aluminum oxide film, the bottom of the hole is a tight barrier alumina thin layer, which is closely combined with the anodic aluminum substrate; D is the self-supporting ordered through-hole oxidation that falls off the substrate by itself in a certain stripping solution and a certain pulse condition Aluminum film; E is the anodized aluminum substrate after the aluminum oxide film of the ...

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Abstract

This invention relates to preparation of free-standing oder pylome pellumina. It includes: (1) Aluminium flake with smooth surface is directly treated to remove grease and oxides. (2) The pre-treated aluminium flake was acted as anode, another clear aluminium flake as cathode. They were electrolyzed for the first time in the acid electrolyte solution for 0.5-2h.The anode contacted the solution by single-side. The anode voltage was 10-150V at 0-25deg.C. (3) The unordered pellumina on the surface was washed by the acid electrolyte solution. (4) The second electrolysis was done. The anode voltage was 10-150V for 3-10h according to the thickness of the pellumina. (5) The oder pylome pellumina was produced by selecting suitable solution for stripping of film with short-time higher voltage by using electrochemical impulse. Then the free-standing oder pylome pellumina was formed and the fenestra was not corroded.

Description

technical field [0001] The invention relates to a preparation method of a self-supporting ordered through-hole aluminum oxide film, which belongs to the field of material chemistry. Background technique [0002] At present, the common method for preparing self-supporting ordered through-hole alumina film is: after a series of pretreatment processes such as annealing, degreasing, deoxidation and polishing, the aluminum sheet is anodized once or more times to form a film, and then formed by The traditional two-step chemical etching method removes the aluminum substrate and the oxide barrier layer at the bottom of the hole to obtain a self-supporting ordered through-hole aluminum oxide film. The chemical corrosion stripping technology used in this method will introduce heavy metal impurity ions in the aluminum oxide film and lead to the widening of ordered film pores; recently, it has been reported to use ion sputtering for stripping, but this method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D71/02C04B38/00C25D11/04C25D11/18
Inventor 夏兴华袁金华
Owner NANJING UNIV
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