Ridge waveguide semiconductor optical device and manufacuring method

Abstract

This invention is a ridge waveguide-type semiconductor luminous device and its manufacturing method. It has layer-shaped structure; from the bottom to top is the lower electrode layer, the semiconductor substrate, the activating layer and the upper coating thin layer. The characteristics are: the flat insulation layer is above the upper coating thin layer and its center has the current input channel with width pre-setting and upper part is the current input channel as the center, the ridge upper coating thick layer on which is the current contact layer, the upper electrode layer wholly covers on the surface of the current contact layer and the insulation layer. The advantages are low cost, high finished products ratio and non-limitation of design, it can be widely used for the semiconductor laser, luminous diode, semiconductor amplifier and integrated luminous components.

Description

Technical field:

[0001] The invention relates to a semiconductor optical device, including a semiconductor laser, a semiconductor optical amplifier, a light-emitting diode, etc., and a manufacturing method of such devices. Background technique:

[0002] Taking the laser as an example, the cross-sectional structure of the traditional ridge waveguide semiconductor laser is attached figure 2 shown. The protruding part in the middle is a ridge-shaped optical waveguide. The insulating layer 8 on both sides of the ridge waveguide plays a role in allowing the external current of the upper electrode to be injected into the active layer 3 only through the ridge waveguide area to generate laser light, thereby reducing the driving current of the semiconductor laser. Its production process is mainly:

[0003] 1. The layered structure required for the laser is grown on the semiconductor substrate layer 2 by the crystal epitaxial growth method, in which the active layer 3 that converts...

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