Device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method

A transparent conductive film and nano-oxide technology, applied in the direction of metal material coating process, etc., to achieve uniform physical and chemical properties, reduce internal short circuits, and simple equipment.

Inactive Publication Date: 2005-09-21
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is difficult to meet the requirement of cost reduction with the existing TCO technology

Method used

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  • Device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method

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Experimental program
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Embodiment

[0030] Preparation of transparent conductive films used in amorphous silicon thin film solar cells, devices such as figure 1 Shown, but to add oxygen cylinders and other carrier gas equipment.

[0031] 1. Preparation process of TCO membrane

[0032] 1.1 Cleaning of substrate material

[0033] The surface of the substrate is first cleaned with deionized water, and then the substrate is soaked in sulfuric acid solution for 2 hours, and then cleaned in an ultrasonic cleaner with an ultrasonic frequency of 20kHz-40Mz for 30 minutes. Take it out and dry it in a clean oven for later use.

[0034] 1.2 Preparation of transparent conductive film

[0035]Firstly, take a certain amount of SnCl4.5H2O, make a solvent with H2O and CH3OH, and then add a certain amount of NH4F aqueous solution in proportion. Put the ultrasonically cleaned 20×20cm glass substrate (6) on the heating furnace (12) and set the temperature of the substrate by the temperature controller (9) to keep the substrate...

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Abstract

The invention relates to a device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method, which comprises an atomization case, a heat reaction chamber and line pipes, wherein the heat reaction chamber is provided with a glass substrate on the bottom, the SnO2 : F solution is atomized by means of supersonic spray method, the nano level particles are sprayed homogeneously onto the glass substrate through an atomization nozzle.

Description

technical field [0001] The present invention relates to a kind of equipment and the method for preparing nano oxide transparent conductive film (TCO), especially relate to using SnO 2 : F (fluorine-doped tin dioxide) adopts the ultrasonic rapid deposition method to prepare a method for a large-area solar cell transparent conductive film and an ultrasonic spray generating device, and the method for preparing a transparent conductive film belongs to the field of semiconductor electronic material coating. Background technique [0002] As a new type of green energy, solar energy has the characteristics of infinity, matching with conventional power grids, and no geographical application restrictions. It has become the first choice for governments to develop new energy sources. Solar cells can directly convert solar energy into electrical energy without any pollution to the environment. Amorphous silicon thin film solar cells have good semiconductor optoelectronic properties, low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C22/76
Inventor 赵庚申王庆章许盛之王瑜
Owner NANKAI UNIV
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