Luminescent powder of light emitting diode for semiconductor white light illumination, and preparation method thereof

A technology for light-emitting diodes and phosphors, applied in the field of phosphors, can solve the problems of difficulty in application, low luminous brightness and lumen efficiency of white light-emitting diode phosphors, and achieve the effects of improving emission intensity, avoiding impurity phases, and improving pure phases.

Inactive Publication Date: 2005-10-26
王锦高
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The luminance and lumen efficiency of existing white light-emitting diode phosph

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Select the raw material, the raw material is selected from Y 2 o 3 、Gd 2 o 3 , CeO 2 , Tb 4 o 7 、Pr 2 o 3 、Dy 2 o 3 、Al 2 o 3 , Ga 2 o 3 , its composition and content according to (Y 1-x Gdx) 3 (Al 1 -yGay) 5 o 12 : Ce z 3+ , where X=0mol / mol, Y=0.45mol / mol, z=0.12mol / mol, the activator includes the rare earth activator Ce 3+ and other activators, the other activators are praseodymium, the concentration of praseodymium is Ce 3+ 10%, raw material purity is 4N, particle size is 2μm; the precursor is prepared by chemical co-precipitation method after mixing, the concentration of the reactant is controlled to be 1mol / L, the acidity pH is 4.5, and the reaction temperature is 90°C; the precipitant NH 3 ·H 2 The concentration of O is 1mol / L, the speed of adding the precipitant is 1.8L / min, and the aging time is 25min, that is, the precursor is made, the particle size is 1.5μm; the flux is mixed into the precursor, and the content of the flux is 5% of the...

Embodiment 2

[0019] Its step is similar to embodiment 1, and its difference is that raw material is selected from Y 2 o3 、Gd 2 o 3 , CeO 2 , Tb 4 o 7 、Pr 2 o 3 、Dy 2 o 3 、Al 2 o 3 , Ga 2 o 3 , its composition and content according to (Y 1-x Gdx) 3 (Al 1 -yGay) 5 o 12 : Ce z 3+ , where X=0.1mol / mol, Y=0.55mol / mol, z=0.06mol / mol, the activator includes the rare earth activator Ce 3+ and other activators, other activators are terbium, the concentration of terbium is Ce 3+ 10%, raw material purity is 4N, particle size is 1μm; Precipitant is prepared by chemical co-precipitation method after mixing, the concentration of reactants is controlled to 0.6mol / L, acidity pH is 3, and reaction temperature is 85°C; precipitant NH 3 ·H 2 The concentration of O is 0.6mol / L, the speed of adding the precipitant is 1L / min, and the aging time is 15min, that is, the precursor is made, the particle size is 1μm; the flux is mixed into the precursor, and the content of the flux is 1% of the...

Embodiment 3

[0021] Its step is similar to embodiment 1, and its difference is that raw material is selected from Y 2 o 3 、Gd 2 o 3 , CeO 2 , Tb 4 o 7 、Pr 2 o 3 、Dy 2 o 3 、Al 2 o 3 , Ga 2 o 3 , its composition and content according to (Y 1-x Gdx) 3 (Al 1 -yGay) 5 o 12 : Ce z 3+ , where X=0.2mol / mol, Y=0.35mol / mol, z=0.1mol / mol, the activator includes the rare earth activator Ce 3+ and other activators, the other activators are praseodymium, the concentration of praseodymium is Ce 3+ 10%, raw material purity is 5N, particle size is 1.5 μ m; use sol-gel method to prepare the precursor after mixing, control the pH of the rare earth nitrate raw material solution in the raw material to 2.5, add citric acid, lemon The content of the acid is raw material: citric acid=1:2, then add the nitric acid solution of aluminum with a concentration of 0.8mol / L according to stoichiometry, then add polyethylene glycol to homogeneous phase, then form the mixed solution into a sol, and wait...

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Abstract

The present invention relates to a semiconductor illumination white light emitting diode fluorescence powder and its preparation method. Said fluorescence powder is yttrium aluminium garnet fluorescence powder activated by cerium. Said invention also provides its chemical molecular formula. Its preparation method includes the following steps: selecting raw material whose purity is 4-5 N and grain size is 1-2 micrometers, preparing precursor body, adding fusing agent which is selected from BaF2+H3BO3, after the fluorescence powder is synthesized, making after-treatment, acid-washing, alkali-washing, water-washing, pulverizing, sieving and finished product detection, its lumen efficiency can be up to 33-401 m/w.

Description

technical field [0001] The invention relates to a fluorescent powder, in particular to a fluorescent powder mainly used for semiconductor lighting white light emitting diodes and a preparation method thereof. Background technique [0002] Phosphor powder is the key material of light-emitting diode (LED). In 1976, "Solid Chemistry" published by University of Science and Technology of China introduced Y 3 AL 5 o 12 : Ce 3+ Phosphor powder is used in flying spot scanners, and its luminous intensity is weak. In the 1990s, with the breakthrough of blue LED technology, the development of white light emitting diode (WLED) was promoted. Jiang Dapeng et al. (Jiang Dapeng et al., Preparation Technology and Main Characteristics of White Light Emitting Diodes, Journal of Luminescence, 2003, 24 (4): 385-389) reported that the lumen efficiency of the WLED made was 14.911m / w, and its luminous intensity had a significant improvement. Great improvement, but still only suitable for displ...

Claims

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Application Information

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IPC IPC(8): C09K11/80H01L33/00H01L33/50
CPCY02B20/181Y02B20/00
Inventor 王锦高
Owner 王锦高
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