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Deformation mirror and method for preparing the same

A deformable mirror and control electrode technology, applied in microlithography exposure equipment, photolithographic process exposure devices, instruments, etc., can solve the problem of increasing the effective deformation range of the mirror surface, change the effective deformation range, improve the application field, and simplify the process. effect of steps

Inactive Publication Date: 2005-11-02
PEKING UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention overcomes the defects of the above-mentioned deformable mirror and its preparation method, and provides a deformable mirror based on bulk silicon MEMS processing technology and its preparation method. The effective deformation range of the mirror surface of the deformable mirror is greatly increased, and the process is simple and economical. Deformable mirrors can be manufactured with a single mirror surface or arrays of multiple deformable mirrors

Method used

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  • Deformation mirror and method for preparing the same
  • Deformation mirror and method for preparing the same
  • Deformation mirror and method for preparing the same

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Experimental program
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Embodiment Construction

[0050] refer to Figures 1-9, Preparation of the mirror unit:

[0051] 1. Prepare silicon wafer: use single-side polished (100) N-type silicon wafer with a thickness of 400 microns

[0052] 2. After cleaning the silicon wafer, perform thermal oxidation, the thickness of silicon dioxide is 1000 Angstroms

[0053] 3. Chemical vapor deposition (CVD) silicon nitride (Si3N4) of 1000 angstroms to 1400 angstroms

[0054] 4. Chemical Vapor Deposition (CVD) 1000 angstrom silicon dioxide film

[0055] 5. Chemical vapor deposition (CVD) silicon nitride (Si3N4) 1000 Angstroms

[0056] 6. The first photolithography out of the bonding area

[0057] 7. Reactive ion etching (RIE) etches away 1000 Angstroms of silicon nitride film

[0058] 8. Buffered hydrofluoric acid (BHF) corrodes 1000 Angstroms of silicon dioxide

[0059] 9. Degumming

[0060] 10. The second photolithography to create the back pattern of the deformable mirror

[0061] 11. Reactive ion etching (RIE) etches away the ...

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Abstract

The invention provides a distorting lens and its preparation method and belongs to distorting lens process and preparation field. The distorting lens comprises specular surface unit and control electrode; the specular surface unit is a silicon slice, by corrosion, which comprises a membrane surface and a back cavity with some bosses; control electrode is fixed on substrate, connect specular surface unit to substrate fixed by anode bonding; bosses of specular surface unit is corresponding to control electrode, there is space between them. Compared with distorting lens made by surface technology, this invention increases efficient distorting range, enhances its application domain and can decrease surface crimp caused by pressure.

Description

Technical field [0001] The invention belongs to the field of preparation and processing of deformable mirrors, and in particular relates to a deformable mirror manufactured based on bulk silicon MEMS processing technology and a preparation method thereof. Background technique [0002] Deformable mirror is a new type of optical device that can be used in optical system for correction of optical path distortion, photoelectric identification of friend and foe, etc. It has good prospects in both military and civilian markets. refer to figure 1 , the traditional surface processing technology to manufacture deformable mirrors usually utilizes the surface sacrificial layer process, that is, deposit a layer of dielectric film (silicon nitride or silicon dioxide) on the silicon substrate first, and this layer of film acts as an insulating layer; The first layer of polysilicon 1, the first layer of sacrificial layer and the second layer of polysilicon 2 are respectively deposited on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B26/08
Inventor 郝一龙杜先锋张大成余宏斌李婷王玮
Owner PEKING UNIV
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