Semiconductor sensor and plating method for semiconductor device

Abstract

A method of plating a semiconductor wafer while maintaining a uniform thickness of the plated film, preventing the precipitation on the back surface of the wafer and preventing the contamination in the subsequent steps. In directly forming connection terminals on the aluminum electrodes on the semiconductor wafer, the non-electrolytic plating is effected in a state where the back surface of the wafer is covered with an insulator. The insulator is preferably a glass substrate which is a part constituting the product. A semiconductor type sensor exhibits improved corrosion resistance against a corrosive medium. The semiconductor type sensor has, in a semiconductor substrate, a structural portion for detecting the physical quantity or the chemical component of a corrosive medium and an electric quantity conversion element, and has pads which are the output terminals for sending the detected electric signals to an external unit, wherein the pads are protected by a precious metal.

Description

technical field [0001] The present invention relates to a semiconductor sensor and to a method of electroplating a semiconductor device during the production of the semiconductor sensor. Background technique [0002] Semiconductor sensors for detecting physical quantities such as pressure and flow velocity of a medium to be measured or for detecting chemical components constituting the medium to be measured have hitherto been used as physical quantity sensors or chemical sensors. Conventional semiconductor-type physical quantity sensors, for example, use pads mainly composed of aluminum as external terminals to transmit detected electrical signals to external units. However, in order to meet the needs of high-precision control of modern machines and equipment, it is already urgent to measure physical quantities in various objects, and the service life of the product is affected because the measured medium corrodes aluminum. [0003] In this case, as Figure 4 It has been sh...

AI Technical Summary

Problems solved by technology

To prevent this from happening, a diaphragm can be formed, electrodes formed and then attached to a glass substrate, however this leads to a problem of exposing the silicon on the backside of the wafer and the plated layer has an irregular thickness

In order to deposit the metal uniformly, it is necessary to form a protective film (resist film, etc.) on the back of the wafer, such as Figure 7 as shown in , and the steps become complicated

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