Chemical battery with porous indium phosphide, electrochemical corrosive system and method

An electrochemical and indium phosphide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that no one has proposed the design of electrochemical cells, and no one has proposed the preparation process of semiconductor materials such as corrosion of porous indium phosphide.
CN1713357AInactive Publication Date: 2005-12-28INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
0 Cites 14 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2005-12-28
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The material of electrochemical cell is Teflon. It mainly consists of tank, side cover, blind plate and top cover. The tank is used to hold electrolyte. The side cover is used to fix work electrode. The top cover is used to lead in platinum auxiliary electrode, reference electrode and nitrogen gas. Three electrodes structure is adopted and they are auxiliary electrode, reference electrode and work electrode. The process of electrochemical corrosion includes following steps: a) after cleavage of indium phosphide hander has done, the ultrasound or boiling process is used to wash it; b) removes the oxide layer on surface of indium phosphide hander; c) makes installation of electrochemical cell; d) blows nitrogen gas for 15 minutes; e) applies voltage on it to make corrosion.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of porous semiconductor materials, in particular to a special electrochemical cell for corroding porous indium phosphide, an electrochemical corrosion system and a process method. Background technique

[0002] For the growth of quantum dots, the key is to achieve controllable size, density and position of quantum dots, and no growth defects. A general method to form semiconductor quantum dot arrays is self-organized crystal growth or selective crystal growth on a suitable mask. The quantum dots formed by the former have a high density, but the position and size are not controllable, while the position and size of the latter are controllable, but due to the limitation of the resolution of lithography technology, the density is not controllable.

[0003] The distribution of quantum dots grown in S-K mode is random and the size is not uniform. For the S-K growth mode, when the growth material has a large latt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More