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Organic thin-film transistor device and method for manufacturing same

A technology of organic thin films and manufacturing methods, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as a lot of time, insufficient effect, and troublesome cleaning.

Inactive Publication Date: 2006-03-22
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, since the above-mentioned carrier mobility improvement technology uses immersion treatment in a solution, there is a problem that the treatment process takes a lot of time, and the subsequent washing also takes a lot of time, especially if a silane coupling agent is used. , due to the combination of silane coupling agent and silicon oxide film, components such as acid and alcohol are generated, so there is a problem of troublesome cleaning
[0009] In addition, there is a problem that the effect of improving carrier mobility is not sufficient for all technologies

Method used

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  • Organic thin-film transistor device and method for manufacturing same
  • Organic thin-film transistor device and method for manufacturing same
  • Organic thin-film transistor device and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0348] At 50W / m 2 Under the condition of 100μm thick PES film substrate F, corona discharge treatment was applied to the surface of the PES film substrate F. The coating solution of the following composition was applied to make the dry film thickness 2μm. After drying at 90°C for 5 minutes, the temperature was 60W / cm It is cured for 4 seconds from a distance of 10cm under a high-pressure mercury lamp.

[0349] Dipentaerythritol hexaacrylate monomer 60g

[0350] Dipentaerythritol hexaacrylate 2-mer 20g

[0351] Dipentaerythritol hexaacrylate trimer or more ingredients 20g

[0352] Diethoxy benzophenone UV initiator 2g

[0353] Silicone surfactant 1g

[0354] Methyl ethyl ketone 75g

[0355] Methyl propylene glycol 75g

[0356] Furthermore, atmospheric pressure plasma treatment was continuously performed on the layer under the following conditions to provide a silicon oxide film with a thickness of 50 nm. As described above, the pull-down layer 1 having a two-layer structure is prov...

Embodiment 2

[0391] Except that the organic semiconductor materials in the inventive sample No. 1 to the inventive sample No. 4 and the comparative sample No. 1 in Example 1 are replaced with the following materials, it is the same as the inventive sample No. 1 to The sample No. 4 of the present invention and the sample No. 1 of the present invention were produced in the same manner as the sample No. 5 of the present invention to the sample No. 8 of the present invention and the comparative sample No. 2 respectively.

[0392] Organic semiconductor materials:

[0393] A chloroform solution of a poly(3-hexylthiophene) regioregular body (manufactured by Aldrich Corporation) was prepared to sufficiently purify the content of Zn and Ni to 10 ppm or less. Use a piezoelectric inkjet method to eject the solution to form a pattern. After drying at room temperature, 2 The heat treatment is performed at 50°C for 30 minutes in a gas replacement atmosphere. At this time, the film thickness of poly(3-hexylt...

Embodiment 3

[0396] The substrate before the formation of the semiconductor layer was produced as follows.

[0397] (Substrate 1)

[0398] As in Example 1, after the gate insulating layer (silicon oxide layer with a film thickness of 200 nm) was provided by the atmospheric pressure plasma method, before the formation of the thin film 4, nitrogen: oxygen = 99:1 (volume ratio) as a discharge gas was flowed in Figure 8 In the shown atmospheric pressure plasma discharge treatment device, the substrate is exposed to the excitation discharge gas for 3 seconds for pretreatment. In addition, as the high-frequency power supply, a high-frequency power supply (frequency: 40kHz) manufactured by Hiden Laboratories was used, and the discharge power was set to 10W / cm 2 get on.

[0399] Then, the thin film 4 was formed in the same manner as in Example 1.

[0400] (Substrate 2~4)

[0401] Except that the material of the reaction gas used in the atmospheric pressure plasma method was changed as shown in Table ...

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Abstract

An organic thin-film transistor device with high carrier mobility and a method for manufacturing such a device are disclosed. The organic thin-film transistor device is characterized by comprising a thin film which is produced by a CVD (chemical vapor deposition) method using a reaction gas and whose surface has a contact angle of pure water not less than 50 1 / 2 and an organic semiconductor layer formed on the thin film.

Description

Technical field [0001] The present invention relates to an organic thin film transistor device and a manufacturing method thereof, and more specifically, to an organic thin film transistor device having high carrier mobility and suitable for high production efficiency and low-cost manufacturing and a manufacturing method thereof. Background technique [0002] With the popularization of information terminals, the demand for flat-panel displays as computer monitors continues to increase. In addition, with the advancement of informatization, there has been an increasing opportunity for information provided in paper media to be provided in electronic form. As a thin, light, and portable display media that can be carried lightly, the demand for electronic files or digital files is increasing. . [0003] Generally, flat-panel display devices use elements using liquid crystal, organic EL, electrophoresis, and the like to form a display medium. In addition, for such display media, in ord...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786H01L51/00C23C4/10C23C4/11C23C16/30H10K99/00
CPCH01L51/0541H01L51/0533H01L51/0545C23C16/30H01L51/0005H01L51/0002H10K71/10H10K71/135H10K10/476H10K10/464H10K10/466
Inventor 平井桂北弘志有田浩了
Owner KONICA MINOLTA INC