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Resonance tunnel through pressure resistance type micro acceleration meter

An accelerometer and resonant tunneling technology, applied in the direction of acceleration measurement using inertial force, can solve the problems of inability to meet high precision requirements, poor temperature stability, low sensitivity, etc., and achieve low power consumption, easy digitization, and small size Effect

Inactive Publication Date: 2006-03-29
ZHONGBEI UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0009] The invention solves the problem that the existing silicon piezoresistive accelerometer has low sensitivity, poor temperature stability, it is difficult to measure the acceleration of high g (acceleration of gravity) value, and cannot meet the high-precision requirements of modern testing technology. The quantum well film has the characteristics of high sensitivity piezoresistive effect, providing a high sensitivity resonant tunneling piezoresistive micro accelerometer

Method used

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  • Resonance tunnel through pressure resistance type micro acceleration meter
  • Resonance tunnel through pressure resistance type micro acceleration meter
  • Resonance tunnel through pressure resistance type micro acceleration meter

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Embodiment Construction

[0033] Resonant tunneling piezoresistive micro-accelerometer, which is made by the following method: the required superlattice film 2 is grown on the semiconductor substrate 1 by molecular beam epitaxy (MBE) technology, and the micro-electromechanical device (MEMS) is used to Processing technology performs the following processing:

[0034](1) Utilize the etching process to remove all the thin films on the substrate 1 except the four thin films distributed in the shape of "ten" (such as Figure 4 as shown in a);

[0035] (2) Using an etching process, each remaining film ( Figure 4 b) The rest of the area except the strip area is etched to the electrode contact layer 3 of the collector, so that a convex line is formed on each film ( Figure 4 c);

[0036] (3) Deposit the ohmic contact layer on the surface of the film by the deposition method, and then use the lift-off method to make the collector electrode 4 and the emitter electrode 7 ( Figure 4 d) (The emitter does not ...

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Abstract

The present invention relates to a resonant tunneling piezoresistance microaccelerometer. Said invention utilizes the characteristics of that superlattice quantum well film has the piezoresistance effect, and on the super lattice film the resonant tunneling voltage-sensitive resistors are made, the substrate of said superlattice film can be made into peripheral base, cross-shaped cantilever connected with base and force-transferring mechanism of mass block whose periphery is connected with cantilever, and four resonant tunneling voltage-sensitive resistors are positioned in the connected place of cantilever and base. The resonant tunneling piezoresistance microaccelerometer is quantum device made up by adopting MEMS process.

Description

technical field [0001] The invention relates to a micro-accelerometer, in particular to a resonant tunneling piezoresistive micro-accelerometer processed by utilizing the high-sensitivity piezoresistive effect of a nano-superlattice quantum well film with a resonant tunneling effect. Background technique [0002] The existing micro accelerometer is a silicon piezoresistive accelerometer, which is based on the silicon piezoresistive effect principle. The so-called piezoresistive effect, that is, the solid under the action of the stress field, causes the change of the resistivity of the resistance, thereby causing the change of the resistance value of the resistance. The piezoresistors of the existing silicon piezoresistive accelerometers are all doped polysilicon, which has low sensitivity and poor temperature stability, and it is difficult to measure high g (acceleration of gravity) value acceleration, which cannot meet the high precision of modern testing technology Requir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/09G01P15/08
Inventor 张文栋刘俊熊继军薛晨阳张斌珍谢斌桑胜波王建陈建军
Owner ZHONGBEI UNIV
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