Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing zinc sulfide quantum wire by using template method

A technology of quantum wire and zinc sulfide, which is applied in the field of nanomaterial preparation, can solve the problems of application limitations, lack of physical properties, large diameter, etc., and achieve low production cost, simple and easy preparation method, and high emission current density. Effect

Inactive Publication Date: 2012-05-23
EAST CHINA NORMAL UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zinc sulfide nanowires prepared by general methods (such as sol-gel method, solvothermal method, etc.) do not show very excellent physical properties due to their relatively large diameters, and are not suitable for both their application and research. There are great restrictions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing zinc sulfide quantum wire by using template method
  • Method for preparing zinc sulfide quantum wire by using template method
  • Method for preparing zinc sulfide quantum wire by using template method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In the first step, the substrate 4 is annealed at 450°C for 4 hours and electrochemically polished at 0°C for 30 seconds; in the second step, the concentration of the sulfuric acid solution is 12wt%, the temperature of the primary anodization is -6°C, and the anodizing The time and current are 2 hours and 10mA respectively; in the third step, the water bath time is 40 minutes, the concentration of the sulfuric acid solution is 12wt%, the temperature of the secondary anodization is -6°C, and the anodization time and current are 2 hours and 10mA; in the fourth step, water bath for 40 minutes; in the fifth step, the solution of dealuminization 40 is SnCl with a concentration of 10wt% 4 Solution, the soaking time is 8 hours; in the sixth step, the reaction time is 10 minutes; in the ninth step, the deposition time is 10 minutes.

Embodiment 2

[0039] In the first step, the substrate 4 is annealed at 550°C for 4.5 hours and electrochemically polished at 5°C for 40 seconds; in the second step, the concentration of the sulfuric acid solution is 14wt%, the temperature of the primary anodization is 0°C, and the anodizing time And the current is 3.5 hours and 6mA respectively; in the third step, the water bath time is 45 minutes, the concentration of the sulfuric acid solution is 14wt%, the temperature of the secondary anodization is 0°C, the anodization time and current are 3 hours and 7mA respectively; In the fourth step, water bath for 50 minutes; in the fifth step, the solution of dealuminization 40 is SnCl with a concentration of 13wt% 4 Solution, the soaking time is 6 hours; in the sixth step, the reaction time is 13 minutes; in the ninth step, the deposition time is 15 minutes.

Embodiment 3

[0041] In the first step, the substrate 4 is annealed at 650°C for 5 hours and electrochemically polished at 10°C for 50 seconds; in the second step, the concentration of the sulfuric acid solution is 16wt%, the temperature of the primary anodization is 6°C, and the anodizing time And the current is 5 hours and 2mA respectively; in the third step, the water bath time is 50 minutes, the concentration of the sulfuric acid solution is 16wt%, the temperature of the secondary anodization is 6°C, the anodization time and current are 5 hours and 2mA respectively; In the fourth step, water bath for 60 minutes; in the fifth step, the solution of dealuminization 40 is SnCl with a concentration of 16wt% 4 Solution, soaking time is 4 hours; in the sixth step, the reaction time is 16 minutes; in the ninth step, the deposition time is 20 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a zinc sulfide quantum wire by using a template method. The method comprises that: firstly, a barrier layer and an alumina layer containing a microporous array are formed on two surfaces of an aluminum substrate in turn by using an anode oxidization method, wherein the barrier layer is an alumina layer which does not contain the microporous array, and the aperture of a micropore is 8 to 15 nanometers; secondly, the aluminum substrate is clamped in an aluminum-base removing clamp to remove the alumina layer containing the microporous array, the barrier layer and aluminum base on a central part of one surface of the aluminum substrate and the barrier layer on the back of the alumina layer on the other surface of the aluminum substrate, and thealuminum-base removing clamp is taken off to obtain an alumina nano template containing the microporous array; thirdly, a layer of gold electrodes is sputtered on the alumina layer on one surface removed with the aluminum base; and finally, the zinc sulfide quantum wire is formed in the micropore of the nano template by using a direct current deposition method. The prepared zinc sulfide quantum wire has the advantages of quite obvious quantum limit effect, huge specific surface area, high purity of the material and even density and property, and has better performance than the large-diameter zinc sulfide quantum wire prepared by background technology.

Description

Technical field [0001] The invention relates to a method for preparing a zinc sulfide quantum wire by a template method, and belongs to the technical field of nano material preparation. Background technique [0002] Quantum wire refers to a variety of quantum effects, nonlocal quantum coherence effects, quantum fluctuations and chaos, photovoltaic effects and nonlinear optical effects when the diameter of a material is equivalent to its de Broglie wavelength. Dimensional nano materials. Low-dimensional semiconductor materials based on quantum size effect, quantum interference effect, quantum tunneling effect, and nonlinear optical effect are a new type of artificially constructed semiconductor material, which is the basis of a new generation of microelectronics, optoelectronic devices and circuits. Its development and application are very likely to trigger a new technological revolution. [0003] The quantum size effect of the zinc sulfide quantum wire causes the energy level of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/62C30B29/48H01L31/036C30B30/02C25D11/12H01L31/0296C25D11/18
Inventor 王继强茅惠兵王基庆朱自强
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com