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Copper alloy thin films, copper alloy sputtering targets and flat panel displays

一种平板显示器、合金薄膜的技术，应用在溅射镀覆、仪器、薄料处理等方向，能够解决联结线路断裂、增加电阻率、影响联结线路可靠性等问题，达到满意可靠性、低电阻率的效果

Inactive Publication Date: 2006-05-10
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to increasing the resistivity, internal oxidation with delamination of the grain boundaries significantly adversely affects the reliability of the bonded lines by, for example, leading to breakage of the bonded lines

Method used

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  • Copper alloy thin films, copper alloy sputtering targets and flat panel displays
  • Copper alloy thin films, copper alloy sputtering targets and flat panel displays
  • Copper alloy thin films, copper alloy sputtering targets and flat panel displays

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0128] A sputtering target comprising a Cu alloy containing 0.28 atomic % Fe and 0.25 atomic % P with the balance being Cu and unavoidable impurities was prepared by a vacuum melting method. Using this sputtering target, a Cu-Fe-P alloy with a thickness of 300 nm was deposited on a glass substrate (#1737 glass from Corning Inc.) with a diameter of 50.8 mm and a thickness of 0.7 mm using a DC magnetron sputtering method film. The composition of the Cu-Fe-P alloy thin film was analyzed by inductively coupled plasma (ICP) atomic emission spectrometry, and it was found that the Fe content was 0.28 atomic % and the P content was 0.05 atomic %. At the time of film deposition, about 80% of P cannot be produced because P has a high vapor pressure.

[0129] Next, a pattern of a positive photoresist (thickness 1 μm) is formed on the Cu-0.28at%Fe-0.05at%P alloy film, etched with a mixed acid etchant, and the photoresist is removed with a photoresist remover. resist. A bond line patter...

Embodiment 2

[0132] A sputtering target comprising a Cu alloy containing 0.35 atomic % Co and 0.25 atomic % P with the balance being Cu and unavoidable impurities was prepared by a vacuum melting method. Using this sputtering target, a Cu-Co-P alloy with a thickness of 300 nm was deposited on a glass substrate (#1737 glass from Corning Inc.) with a diameter of 50.8 mm and a thickness of 0.7 mm using a DC magnetron sputtering method film. The composition of the Cu-Co-P alloy thin film was analyzed by inductively coupled plasma (ICP) atomic emission spectrometry, and it was found that the Co content was 0.35 atomic % and the p content was 0.05 atomic %. At the time of thin film deposition, since P had a high vapor pressure as in Example 1, about 80% of P could not be produced.

[0133] Next, form a pattern of a positive photoresist (thickness 1 μm) on the Cu-0.35at%Co-0.05at%P alloy film, etch with a mixed acid etchant, and remove the photoresist with a photoresist remover. resist. A bond...

Embodiment 3

[0136] A sputtering target comprising a Cu alloy containing 0.5 atomic % of Mg and 0.25 atomic % of P and the balance of Cu and unavoidable impurities was prepared by a vacuum melting method. Using this sputtering target, a Cu-Mg-P alloy with a thickness of 300 nm was deposited on a glass substrate (#1737 glass from Corning Inc.) with a diameter of 50.8 mm and a thickness of 0.7 mm using a DC magnetron sputtering method film. The composition of the Cu-Mg-P alloy thin film was analyzed by inductively coupled plasma (ICP) atomic emission spectrometry, and it was found that the Mg content was 0.5 atomic % and the p content was 0.05 atomic %. At the time of film deposition, as in Examples 1 and 2, about 80% of P could not be produced because P had a high vapor pressure.

[0137] Next, a pattern of a positive photoresist (thickness 1 μm) is formed on the Cu-0.5at%Mg-0.05at%P alloy film, etched with a mixed acid etchant, and the photoresist is removed with a photoresist remover. r...

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Abstract

A copper alloy thin film, containing Fe and P and the balance is basically Cu, wherein the content of Fe and P satisfies all of the following conditions (1) to (3), and, wherein, heat treatment at 200 to 500 ° C for 1 to 120 After 10 minutes, Fe2P precipitates on the grain boundary of Cu: 1.4NFe+8NP<1.3 (1); NFe+48NP>1.0 (2); 12NFe+NP>0.5 (3); Wherein, NFe represents the content of Fe (atomic percentage ); NP represents the content of P (atomic percent).

Description

technical field [0001] The invention relates to a copper alloy thin film, a copper alloy sputtering target and a flat panel display. Specifically, the present invention relates to copper alloy thin films capable of reducing voids while maintaining their low resistivity even after heat treatment, sputtering targets for depositing copper alloy thin films, and using copper alloy thin films as bonding Flat panel displays with line films and / or electrode films. Background technique [0002] Flat panel displays typified by liquid crystal displays, plasma display panels, field emission displays, and electroluminescent displays have been enlarged in size. In order to reduce signal delays in signal lines as display size increases, materials with lower resistivity must be used in the bonding lines of flat panel displays. In displays, liquid crystal displays also require lower resistivity in their connecting lines for driving pixels, such as gate lines and source-drain lines of thin-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343C22C9/00
CPCC23C14/185G02F1/136295H01J29/02H01J2211/225H01L23/53233H01L27/124H01L2924/0002Y10T428/31678H01L2924/00C23C14/34G02F1/1337
Inventor 钉宫敏洋富久胜文高木胜寿中井淳一
Owner KOBE STEEL LTD
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