Method and apparatus for polishing large-scale diamond membrane

A diamond film and large-area technology, which is applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problem of high polishing roughness and achieve large polishing area, high polishing precision, and high polishing efficiency Effect

Inactive Publication Date: 2006-05-31
WUHAN INSTITUTE OF TECHNOLOGY
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Problems solved by technology

Since the reaction of ions with the surface of the diamond film is non-directi

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  • Method and apparatus for polishing large-scale diamond membrane
  • Method and apparatus for polishing large-scale diamond membrane
  • Method and apparatus for polishing large-scale diamond membrane

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0024] The present invention is a method for polishing a large-area diamond film by using plasma. The method is as follows: firstly, using microwave excitation to generate electron cyclotron resonance plasma, and then using ion cyclotron resonance heating to couple high-frequency power to ion components in the plasma , raise the kinetic temperature of the ions to 10-40eV, and then use the extraction electrode and the gradient magnetic field to control the movement of the ions in the plasma, so that the ions move down to the surface of the diamond film and selectively interact with the diamond film surface to be removed. The carbon atoms undergo an etching reaction to generate volatile gases, thereby completing the polishing of the diamond film.

[0025] This method comprises generation of plasma, ion heating in plasma, ion motion control and ion etching...

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Abstract

A method and an equipment for extended diamond film polishing. It includes such steps as follows: produce electron cyclotron resonance plasm by microwave stimulatingú”high-frequency power was coupled to ion in plasm by ion convoluted vibratingú¼so that the kintic temperature of ion was increased to 10í½40eV; control ion movement by derivative electrode and graded magnetic field so that etching reaction may occur between specific carbon atom that to be wiped off and the ion as the ion moves to the surface of diamond filmú”Volatile gas generated and polishing completed. The equipment consists of four partsú‘plasma generating unitú¼ion heating up unitú¼ion movement controlling unit and etching reaction and polishing unit. Advantages are high polishing efficiencyú¼large polishing dimensionú¼high precision and non pollution of diamond film surface.

Description

technical field [0001] The invention relates to the field of application of plasma technology and diamond superhard materials, in particular to a method and device for polishing a large-area diamond film by using plasma. Background technique [0002] Diamond has the highest hardness, high thermal conductivity and chemical stability, and good light transmission, so it has a wide range of applications in machining, optics, microelectronics and military fields. Because natural diamond is rare and expensive, people have developed a variety of synthetic diamond technologies, including high temperature and high pressure methods and plasma chemical vapor deposition methods. Since the diamond prepared by the plasma chemical vapor deposition method is a continuous film, and has the characteristics of high efficiency and low cost, the diamond film prepared by this method can be widely used in the fields of machining, optics, thermal and semiconductor. However, the diamond film prepar...

Claims

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Application Information

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IPC IPC(8): C30B33/12H05H1/30
Inventor 马志斌汪建华何艾华万军王传新毛家龙
Owner WUHAN INSTITUTE OF TECHNOLOGY
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