Method for making group ó¾ nitride devices and devices produced thereby

A technology of nitrides and devices, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as parasitic absorption, poor lattice matching, high expansion resistance, etc.

Inactive Publication Date: 2006-05-31
CRYSTAL PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both are very poorly lattice matched to GaN (>45%)
It has been found that very thin films are difficult to contact and suffer from high spreading resistance
Also, very thin LED chips suffer from light extraction problems due to waveguides and thus parasitic absorption problems at contacts and edges

Method used

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  • Method for making group ó¾ nitride devices and devices produced thereby
  • Method for making group ó¾ nitride devices and devices produced thereby
  • Method for making group ó¾ nitride devices and devices produced thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0110] LAO wafers were cleaned and placed in an Aixtron 200HT MOCVD reactor. The growth process follows standard GaN-on-sapphire growth steps. The substrate was first preheated to 1050°C for 10 minutes in a nitrogen atmosphere. Lower the temperature to 580 °C and grow an AlN low-temperature buffer layer with a thickness of 50 nm on the LAO wafer. Then, the temperature was raised to 950 °C and 800 nm of undoped GaN was grown on top of the AlN buffer layer. Reflection measurements are shown in the Figure 15 middle. The state of the film was smooth, and there was no peeling.

[0111] But TEM (Transmission Electron Microscopy) showed very different results. The AlN layer is poorly crystallized and provides a growth nucleus for the GaN film on top of it. Since the preferred orientation of AlN nuclei is along the c-axis [0001] direction, as a result, the GaN film is a c-plane (0001) film rather than an m-plane (10 1 0) Membrane. Therefore, there is no epitaxial relationship...

Embodiment 2

[0113] Fresh LAO wafers were cleaned and placed in an Aixtron 200HT MOCVD reactor. Following our method changed the growth steps. First, the step of preheating the substrate to 1050° C. for 10 minutes is eliminated. Instead, the wafer is directly heated to 900°C, and AlN deposition begins at this high temperature. After growing a 50 nm high temperature AlN buffer layer, the temperature was raised to 950 °C and an 800 nm n-doped GaN:Si layer was grown on top of the AlN layer. Reflectance measurements to monitor the smoothness of the film during growth ( Figure 16 ) shows a substantial improvement in film quality and is significantly different from that of Example 1.

[0114] The film was specular and showed no peeling after cooling to room temperature. Silicon doping has no effect on the quality of the film. When observed under a microscope, the GaN film was very uniform, and no cracks were found in the film. This is consistent with the fact that the thermal expansion co...

Embodiment 3

[0117] Once the basic growth process of n-doped GaN:Si epitaxial film is established, the growth of GaN film with complete p-n junction and quantum well structure is carried out. Fresh LAO wafers were cleaned and placed in an Aixtron 200HT MOCVD reactor. We used the growth procedure established in Example 2 to grow a fully structured GaN film. The wafer is directly heated to 900°C, and then a 50nm-thick AlN high-temperature buffer layer is deposited. After growing the AlN buffer layer, the temperature was raised to 950° C. in order to grow an 800 nm n-doped GaN:Si layer. Then, grow a quantum well structure consisting of two pairs of 10nm undoped GaN barriers and 5nm InGaN wells. A 10 nm AlGaN barrier layer was grown on top of the quantum well structure before growing a final 200 nm p-doped GaN:Mg cap layer.

[0118] Reflection measurement data ( Figure 17 ) showed an excellent growth state. After the growth of the p-n junction and MQW structure is completed, the furnace ...

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Abstract

A method of making at least one semiconductor device comprising the steps of: providing a sacrificial growth substrate of lithium aluminate (LiAlO2); forming at least one semiconductor layer comprising a III-nitride adjacent to the sacrificial growth substrate; mounting A substrate is secured adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and the sacrificial growth substrate is removed. The method may also include adding at least one contact to a surface of the at least one semiconductor layer opposite the mounting substrate, and separating the mounting substrate and the at least one semiconductor layer into a plurality of individual semiconductor devices. To fabricate the final device, the method may also include bonding the mounting substrate of each individual semiconductor device to the heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly to the fabrication of ultra-thin Ill-nitride-based semiconductor or electronic devices such as light emitting diodes (LEDs) and laser diodes, and related devices. Background technique [0002] Group III nitride compound semiconductor devices include light emitting devices and electronic devices. The light-emitting device can be tailored with the composition of the film to emit light in the range from yellowish all the way through green, blue, and finally into the ultraviolet. It is also possible to produce "white light" by means of appropriate combinations with light-emitting devices of other colors, or by adding phosphors to these devices. The emission mode of such a device can be incoherent, known as a "light emitting diode" (LED), or coherent, in which case the device is known as a "laser diode" (LD). Electronic devices may also include high electron mobility trans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00
Inventor 布鲁斯·H·T·沙尔约翰·约瑟夫·加拉格尔大卫·韦恩·希尔
Owner CRYSTAL PHOTONICS
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