Etchant and etching method

An etchant and etching technology, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of poor insulation resistance, insufficient coverage, increased exposed area, etc., and achieve the effect of improving the etching function
CN1798874AInactive Publication Date: 2006-07-05MITSUBISHI CHEM CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MITSUBISHI CHEM CORP
Publication Date
2006-07-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

Fluorescent probes represented by the general formula (I) wherein R<1> and R<2> are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R<3> is a monovalent substituent except hydrogen, carboxyl, and sulfo; R<4> and R<5> are each hydrogen, halogeno, or alkyl; R<6> to R<9> are each alkyl; R<10> and R<11> are each hydrogen, halogeno, or alkyl; M<-> is a counter ion; and before the capture of a proton, a metal ion, or an active oxygen species, the combination of R<1>, R<2>, and R<3> gives the benzene ring to which they are bonded such a substantially high electron density as to make the compound substantially nonfluorescent, while after the capture of a proton, a metal ion, or an active oxygen species, the combination brings about such a substantial lowering in the electron density of the benzene ring to which they are bonded as to make the compound substantially highly fluorescent.
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Description

technical field

[0001] The present invention relates to an etchant for forming a pattern on a thin metal film by wet etching and an etching method using the etchant. More specifically, the present invention relates to an etchant and an etching method for etching a multilayer film including an aluminum alloy layer and a molybdenum-niobium alloy layer. Background technique

[0002] Recently, electrodes and gate wiring materials used in semiconductor devices such as semiconductor elements and liquid crystal display elements are increasingly required to have a higher degree of microfabrication accuracy. In addition, it has been proposed to use metallic materials with lower electrical resistance. Examples of metal materials having lower resistance include aluminum and aluminum alloys, and these materials are being used more and more.

[0003] Examples of techniques used to process thin films of the metal to form microstructures such as wiring include wet etching techniques in w...

Claims

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