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Method for preparing Ti-Si-N film by adjusting gas partial pressure of magnetic controlled sputtering reaction

A reactive gas, magnetron sputtering technology, applied in sputtering coating, ion implantation coating, coating and other directions, can solve the problems of complex configuration of sputtering target magnetic field, inconvenient adjustment and control, etc., to achieve strong practicability , The effect of simplifying the process method

Inactive Publication Date: 2006-07-19
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the magnetic field configuration of the sputtering target in this method is too complicated, and it is inconvenient to adjust and control

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example

[0010] In the embodiment, the sputtering target is a Ti-Si mosaic target, and the Ti-Si mosaic target is obtained by pasting a pure silicon (99.999%) sheet on a circular (Φ108mm×12mm) titanium (99.99%) target. The effective sputtering area ratio of Ti and Si on the Ti-Si mosaic target can be adjusted by the number of pasted silicon wafers.

[0011] When using a Ti-Si mosaic target for sputtering, the polished substrate material is ultrasonically washed with alcohol and acetone and then placed in a vacuum chamber. The distance between the substrate and the target is about 80 mm. First draw the background vacuum in the vacuum chamber to 1×10 -3 Pa, and then the substrate is bombarded with a low-energy Ti ion beam to remove surface contamination. Then open the gas valve to feed the required argon and nitrogen for the reaction, and the total working pressure is fixed at 2-4×10 -1 The level of Pa, and then adjust the flow of argon and nitrogen through the flowmeter of argon and n...

example 1

[0012] Example 1. The effective sputtering area ratio of Ti and Si in the Ti and Si mosaic target is about 4:1, the base material is stainless steel (1Cr18Ni9Ti), and the working pressure is 2.0×10 -1 Pa, nitrogen partial pressure is 0.002-0.01Pa. The prepared Ti-Si-N film layer contains 30-45at% Ti, 14-18at% Si, and the nanometer hardness is 30-45GPa.

example 2

[0013] Example 2. The effective sputtering area ratio of Ti and Si in the Ti and Si mosaic target is about 4:1, the base material is stainless steel (1Cr18Ni9Ti), and the working pressure is 2.0×10 -1 Pa, nitrogen partial pressure is 0.008-0.04Pa. The prepared Ti-Si-N film layer contains 23-30at% Ti, 14-18at% Si, and the nanometer hardness is 20-40GPa.

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Abstract

The preparation method for Ti-Si-N film comprises: using dc reaction magnetron sputtering with Ti-Si embedded target and N2-Ar mixed atmosphere; setting the effective sputtering area and total gas pressure; changing the N2 partial pressure within 0.002-0.04Pa. This invention is practical to control film intergradient, micro-tissue and mechanical performance by just changing one gas.

Description

technical field [0001] The invention relates to a method in the technical field of thin films, in particular to a method for preparing a Ti-Si-N film by adjusting the partial pressure of a magnetron sputtering reaction gas. technical background [0002] Since Ti-Si-N belongs to ternary nitride film, it has TiN nanocrystal / Si 3 N 4 The nanocomposite structure of the amorphous phase, the proportion of these two different phases in the whole film and their microstructure have a strong impact on the overall mechanical and other properties of the film. To adjust the ratio of these two phases, it is necessary to adjust the ratio of Ti and Si elements entering the film during the sputtering process. At present, the method of adjusting the ratio of Ti and Si is mainly to use independently adjustable Ti target and Si target for double-target sputtering or to make composite targets, alloy targets or mosaic targets with different ratios of Ti and Si. However, the former needs to hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/56C23C14/54
Inventor 蔡珣徐晔陈秋龙沈耀胡亚威
Owner SHANGHAI JIAO TONG UNIV
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