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Acid corrosion solution for preparing multicrystal silicon pile surface and its using method

一种酸腐蚀、多晶硅的技术，应用在化学仪器和方法、表面浸蚀组合物、半导体/固态器件制造等方向，能够解决废水处理成本高、重金属环境污染危害比较大等问题，达到消除环境的危害的效果

Active Publication Date: 2006-08-23
WUXI SUNTECH POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can meet the requirements of large-scale preparation of polysilicon textured surface, because the oxidizing agent in its acid etching solution is CrO 3 or K 2 Cr 2 o 7 or their mixtures, so there is a defect that the treatment cost of wastewater generated in the production process is relatively high, especially the discharge of heavy metals in wastewater is relatively harmful to environmental pollution

Method used

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  • Acid corrosion solution for preparing multicrystal silicon pile surface and its using method
  • Acid corrosion solution for preparing multicrystal silicon pile surface and its using method
  • Acid corrosion solution for preparing multicrystal silicon pile surface and its using method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Add 5 moles of KNO3 to the hydrofluoric acid solution with a concentration of 20 moles / liter, mix well, control the temperature of the solution at 20 degrees, put it into a 125*125 polysilicon wafer cut by wire cutting, and corrode it for 10 minutes. This polycrystalline silicon wafer is then made into a solar cell. The conversion efficiency, fill factor, open circuit voltage and current of the solar cell are 14.49%, 0.765, 598 millivolts and 4.95 amperes, respectively. The surface morphology of the etched polysilicon is shown in Figure 1.

Embodiment 2

[0018] Add 2.34 moles of NH4NO2 to 1 liter of 20 mol / liter hydrofluoric acid, mix well, control the temperature of the solution at -10 degrees, put in a 125*125 polysilicon wafer, and etch for 20 minutes. This polycrystalline silicon wafer is then made into a solar cell. The conversion efficiency, fill factor, open circuit voltage and current of this solar cell are 15.38%, 0.768, 611 millivolts and 5.12 amperes, respectively. The surface morphology of the etched polysilicon is shown in Figure 2.

Embodiment 3

[0020] Add 1.17 moles of NaNO3 to 1 liter of 20 moles / liter of hydrofluoric acid, mix well, control the temperature of the solution at 10 degrees, and then add 0.15 moles of NaNO2. Put in a 125*125 polysilicon wafer and etch for 20 minutes. This polycrystalline silicon wafer is then made into a solar cell. The conversion efficiency, fill factor, open circuit voltage and current of this solar cell are 15.03%, 0.771, 608 millivolts and 5.01 amperes, respectively. The surface morphology of the etched polysilicon is shown in Fig. 3 .

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Abstract

The present invention discloses acid corrosion solution for preparing polycrystalline silicon pile surface and its usage. The solution is compounded with oxidant and hydrofluoric acid and through mixing, and the oxidant is nitrate or nitrite. During use, the cut polycrystalline silicon chip is set inside the corrosion solution for corrosion at the temperature of -10 to +25 deg.c for 0.5-20 min to eliminate damage surface caused by wire electrode cutting, with the acid corrosion time and temperature being dependent on the solution concentration. The present invention is suitable for both intermittent production and continuous production, and has easy treatment of the produced waste acid.

Description

technical field [0001] The invention relates to an acid etching solution for preparing polysilicon textured surfaces for solar cells, and a method for preparing polysilicon textured surfaces for solar cells using the acid etching solution. Background technique [0002] China No. 200410064831.1 Patent Application for Invention discloses a method for preparing polysilicon textured surfaces. The method replaces traditional NaOH and KOH etching solutions with acid etching solutions to remove the damaged layer produced on the surface of polysilicon wafers during the cutting process. The original appearance of the polysilicon body surface is preserved, so that the desired suede surface is formed on the polysilicon surface after the damaged layer is removed. Although this method can meet the requirements of large-scale preparation of polysilicon textured surface, because the oxidizing agent in its acid etching solution is CrO 3 or K 2 Cr 2 o 7 Or their mixture, so there is the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/24H01L21/461
CPCH01L31/0236C09K13/08Y02E10/50H01L31/02363H01L21/306
Inventor 季静佳覃榆森施正荣
Owner WUXI SUNTECH POWER CO LTD
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