Acid corrosion solution for preparing multicrystal silicon pile surface and its using method

Abstract

The present invention discloses acid corrosion solution for preparing polycrystalline silicon pile surface and its usage. The solution is compounded with oxidant and hydrofluoric acid and through mixing, and the oxidant is nitrate or nitrite. During use, the cut polycrystalline silicon chip is set inside the corrosion solution for corrosion at the temperature of -10 to +25 deg.c for 0.5-20 min to eliminate damage surface caused by wire electrode cutting, with the acid corrosion time and temperature being dependent on the solution concentration. The present invention is suitable for both intermittent production and continuous production, and has easy treatment of the produced waste acid.

Description

technical field

[0001] The invention relates to an acid etching solution for preparing polysilicon textured surfaces for solar cells, and a method for preparing polysilicon textured surfaces for solar cells using the acid etching solution. Background technique

[0002] China No. 200410064831.1 Patent Application for Invention discloses a method for preparing polysilicon textured surfaces. The method replaces traditional NaOH and KOH etching solutions with acid etching solutions to remove the damaged layer produced on the surface of polysilicon wafers during the cutting process. The original appearance of the polysilicon body surface is preserved, so that the desired suede surface is formed on the polysilicon surface after the damaged layer is removed. Although this method can meet the requirements of large-scale preparation of polysilicon textured surface, because the oxidizing agent in its acid etching solution is CrO 3 or K 2 Cr 2 o 7 Or their mixture, so there is the ...

Images