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Production method for light emitting element

A technology of light-emitting device and light-emitting layer, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., and can solve the problems of reducing radiation intensity and easy deterioration

Inactive Publication Date: 2006-09-20
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MgZnO-type oxides can be formed by the above-mentioned MOVPE process or MBE process, but the formation process is likely to be the reason for the lack of oxygen in MgZnO-type oxides, and it is easy to deteriorate the crystallinity of the ZnO-containing active layer, thus extending the reason for this active layer. The total half-value width of the emission wavelength range of the source layer, which reduces the emission intensity and suppresses the desired emission efficiency of a specific wavelength

Method used

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  • Production method for light emitting element
  • Production method for light emitting element
  • Production method for light emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 3

[0092] Figure 13 It is a schematic diagram showing an example of a specific light-emitting device in Embodiment 3 of the present invention;

[0093] Figure 14A is description Figure 13 A diagram of an example manufacturing process for a light emitting device;

[0094] Figure 14B is to continue Figure 14A The processing steps diagram;

[0095] Figure 14C is to continue Figure 14B The processing steps diagram;

[0096] Figure 15 is a schematic diagram of the corundum crystal structure;

[0097] Figure 16A is a schematic diagram illustrating the operation of the light-emitting device manufacturing method according to Embodiment 3 of the present invention;

[0098] Figure 16B is description Figure 16A A diagram of subsequent operations;

[0099] Figure 16C is description Figure 16B A diagram of subsequent operations;

[0100] Figure 16D is description Figure 16C A diagram of subsequent operations;

[0101] Figure 17 is an example Figures 14A-14...

Embodiment 1

[0114] figure 1 Schematically showing the stacked structure of important parts of the light-emitting device of the first invention, the device has a light-emitting layer portion in which n-type cladding layer 34, active layer 33 and p-type cladding layer 2 are stacked in sequence. The p-type cladding layer 2 is composed of p-type Mg x Zn 1-x O layer (O≤x≤1): hereinafter sometimes referred to as a p-type MgZnO layer 2). In the p-type MgZnO layer 2, one, two or more of trace amounts of N, Ga, Al, In and Li are included as p-type dopants: as mentioned above, the p-type carrier concentration is adjusted in 1×10 16 ~8×10 18 place / cm 3 range, especially at 10 17 ~10 18 place / cm 3 within the range of left and right.

[0115] figure 2 is a schematic diagram of the crystal structure of MgZnO, showing the so-called Wurtzite structure. In this structure, the planes filled with oxygen ions and the planes filled with metal ions (Zn or Mg ions) are alternately stacked along the...

Embodiment 2

[0164] Embodiments of the second invention are described below. Because the basic part of the light-emitting device applicable to the second invention is the same as that described in Embodiment 1, it will not be described in detail (see Figure 1~4 with Figure 10A and 10B ). Such as Image 6 As shown in (a), the GaN buffer layer 11 is epitaxially grown on the sapphire substrate 10, and then a p-type MgZnO layer 52 (generally 50 nm in thickness), an MgZnO active layer 53 (generally 30 nm in thickness) and n Type MgZnO layer 54 (generally 50nm in thickness) (it is also possible to grow in reverse). The epitaxial growth of each layer in this example can be performed by a MOVPE process similar to that described in Example 1, but with the following points of difference. More specifically, when growing the MgZnO active layer 53 and the p-type MgZnO layer 52, an ultraviolet lamp (such as an excimer ultraviolet lamp) as an ultraviolet light source is arranged on the main surfac...

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Abstract

When p-type MgxZn1-xO is grown by an organometallic vapor growth method, a MgxZn1-xO layer is heat treated in an oxygen atmosphere during the growth and / or after the growth completion. In addition, the surface of a substrate to be grown and a material gas are irradiated with a ultraviolet ray when a semiconductor layer is vapor-grown. In addition, when a MgxZn1-xO buffer layer having its c-axis oriented in a layer thickness direction is formed by an atomic layer exitaxy method, a metal mono-atomic layer is grown at first. In addition, a ZnO-based semiconductor active layer is formed by a semiconductor material mainly consisting of ZnO containing Se or Te. A light emitting element is formed by using these techniques.

Description

[0001] This application is a divisional application of the application number 02811083.8 filed on April 25, 2002. technical field [0002] The present invention relates to a light emitting device and a manufacturing method thereof. Background technique [0003] High-brightness light-emitting devices capable of producing short-wave radiation in the blue region have long been in demand, and such light-emitting devices have recently been realized using AlGaInN-based materials. Rapid progress has also been made in applying this device to full-color light-emitting devices or display devices by combining it with red and green high-intensity light-emitting devices. However, the application of AlGaInN-based materials inevitably increases the cost, because the material contains the main elements Ga and In, both of which are relatively rare metals. One of the other major problems of this material is that its growth temperature is as high as 700-1000 ℃, and it consumes a considerable ...

Claims

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Application Information

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IPC IPC(8): H01L33/00C30B25/02C30B29/16C30B29/22H01L21/205H01L21/365H01L33/02H01L33/28H01L33/42
Inventor 石崎顺也
Owner SHIN-ETSU HANDOTAI CO LTD
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