Production of non-volatile memory

Abstract

The process provided for fabricating a NVRAM (non-volatile random access memory) comprises: providing a substrate; forming multi first memory cells on the said substrate; there is a gap between each two spacers; forming an insulation spacer on the sidewall of each memory cell; forming a composite electric layer on said substrate; forming a doping poly crystalline silicon layer to fill out the gaps between memory cells; removing a portion of said doping crystalline silicon layer to form multi trenches; forming a metal layer on substrate to fill out the trenches; removing a portion of metal layer to form the gate electrode; the gate electrode and the composite dielectric layer composes the second memory cells; the second storage cell and the first storage cell composes a memory cell array structure; forming the source region and drain region on substrate aside said memory cell area structure.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor memory element, in particular to a method for manufacturing a non-volatile memory. Background technique [0002] Among various non-volatile memory products, it has the advantage that data can be stored, read, and erased for many times, and the stored data will not disappear after the power is turned off. Program read-only memory (EEPROM) has become a memory element widely used in personal computers and electronic equipment. [0003] A typical EEPROM is made of doped polysilicon for floating gates and control gates. In the prior art, a charge trapping layer is also used to replace the polysilicon floating gate, and the material of the charge trapping layer is silicon nitride, for example. This silicon nitride charge trapping layer usually has a layer of silicon oxide above and below it, and forms a silicon oxide / silicon nitride / silicon oxide (oxide-nitride-oxide, ONO for short...

AI Technical Summary

Problems solved by technology

Since the resistance of the doped polysilicon is much higher than that of the metal silicide, the electrical operation of the storage unit 102 and the storage unit 116 will obviously have a gap, thereby reducing the performance of the device and affecting the stability of the device.

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