Unlock instant, AI-driven research and patent intelligence for your innovation.

Composition for forming underlying film containing dextrin ester compound

A compound, dextrin ester technology, which is applied in the photoengraving process of the pattern surface, the photosensitive material for opto-mechanical equipment, optics, etc., can solve the problem that the anti-reflection film material is difficult to apply to the substrate, etc., and achieve high filling. , the effect of good precision

Active Publication Date: 2006-12-06
NISSAN CHEM CORP
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, it is difficult to apply organic antireflection film materials to substrates with a large aspect ratio. In recent years, materials focusing on embedding and planarization characteristics have been gradually developed (for example, refer to Patent Document 3, Patent Document 4, Patent Document 5, Patent Document 6)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for forming underlying film containing dextrin ester compound
  • Composition for forming underlying film containing dextrin ester compound
  • Composition for forming underlying film containing dextrin ester compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0090] Dextrin ester compound AC-3 (the terminal group ratio of dextrin: 24% of hydroxyl group, 76% of acetoxy group, weight average molecular weight of 8100, produced by Qunyei Chemical Industry Co., Ltd. ), add 9.23g of tetramethoxymethyl glycoluril, 0.01g of pyridinium p-toluenesulfonate, 0.129g of surfactant R-30 (manufactured by Dainippon Inki Chemical Co., Ltd.), 14.79g g of propylene glycol monomethyl ether, and 73.91 g of ethyl lactate to form an 18.0% by mass solution. Then, it was filtered using a polyethylene microfilter with a pore size of 0.05 μm to prepare a solution of a composition for forming a lower layer membrane.

[0091] In addition, the terminal group ratio of dextrin: 24% of hydroxyl groups and 76% of acetoxy groups means that 76% of the total number of hydroxyl groups contained in dextrin are acetoxy groups and the remaining 24% are hydroxyl groups.

[0092] In addition, the weight average molecular weight of a dextrin ester compound is measured by the...

Embodiment 2

[0095] Dextrin ester compound AC-4 (the terminal group ratio of dextrin: hydroxyl 32%, acetoxy 68%, weight average molecular weight 8900, manufactured by Qunyei Chemical Industry Co., Ltd.) with a concentration of 30% by mass was dissolved in 85.0 g ), add 9.23g of tetramethoxymethyl glycoluril, 0.01g of pyridinium p-toluenesulfonate, 0.129g of surfactant R-30 (manufactured by Dainippon Inki Chemical Co., Ltd.), 14.79g g of propylene glycol monomethyl ether, and 73.91 g of ethyl lactate to form an 18.0% by mass solution. Then, it was filtered using a polyethylene microfilter with a pore size of 0.05 μm to prepare a solution of a composition for forming a lower layer membrane.

Embodiment 3

[0097] Dextrin ester compound AC-3 (the terminal group ratio of dextrin: 24% of hydroxyl group, 76% of acetoxy group, weight average molecular weight of 8100, produced by Qunyei Chemical Industry Co., Ltd. ) in ethyl lactate solution, add 9.23g tetramethoxymethyl glycoluril, 0.0271g ammonium dodecylbenzenesulfonate, 0.129g surfactant R-30 (manufactured by Dainippon Inki Chemical Co., Ltd.) , 14.79 g of propylene glycol monomethyl ether, and 73.91 g of ethyl lactate to form a solution of 18.0% by mass. Then, it was filtered using a polyethylene microfilter with a pore size of 0.05 μm to prepare a solution of a composition for forming a lower layer membrane.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
boiling pointaaaaaaaaaa
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for lithography comprising a dextrin ester compound that at least 50% of hydroxy groups in dextrin is converted into ester groups, a crosslinking compound, and an organic solvent.

Description

technical field [0001] The present invention relates to a novel composition for forming an underlayer film for lithography, an underlayer film formed from the composition, and a method for forming a photoresist pattern using the underlayer film. In addition, the present invention relates to a lower layer anti-reflection film that can be used as a lower layer antireflection film for reducing the reflection of exposure radiation light from a substrate to a photoresist layer coated on a semiconductor substrate in a photolithography process for manufacturing a semiconductor device, for making A flattening film for flattening a semiconductor substrate, a film for preventing contamination of a photoresist layer caused by substances generated from a semiconductor substrate during heating and baking, etc., an underlayer film for lithography used for forming the underlayer film A composition for forming an underlayer film, and a method for forming the underlayer film. In addition, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11H01L21/027G03F7/09
CPCG03F7/091H01L21/0276
Inventor 竹井敏境田康志新城彻也
Owner NISSAN CHEM CORP