Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Aqueous dispersoid for chemical machinery grinding and grinding method and concocting reagent kit

A chemical-mechanical and dispersion technology, applied in chemical instruments and methods, polishing compositions containing abrasives, grinding devices, etc., can solve problems such as scratches or peeling of semiconductor substrates, low mechanical strength, and product yield problems, To achieve the effect of reducing scratches or peeling

Inactive Publication Date: 2006-12-20
JSR CORPORATIOON
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, these low dielectric constant insulating films are weaker in mechanical strength, softer and more brittle than silicon oxide films formed by a vacuum process. When chemical mechanical polishing is performed with a known chemical mechanical polishing aqueous dispersion, scratches or peeling may occur on the semiconductor substrate as the object to be polished, and the yield of the product becomes a problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Aqueous dispersoid for chemical machinery grinding and grinding method and concocting reagent kit
  • Aqueous dispersoid for chemical machinery grinding and grinding method and concocting reagent kit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0232] 3.2.1. Preparation of the second grinding water-based dispersion (the chemical mechanical polishing water-based dispersion of the first form of the present invention)

[0233]Water containing colloidal silica particles C1 prepared in the above "3.1.2-1. Preparation of aqueous dispersion containing colloidal silica particles C1" in an amount equivalent to 1% by mass in terms of silica Dispersion, and the aqueous dispersion containing organic-inorganic composite particles prepared in the above "3.1.3. Preparation of aqueous dispersion containing organic-inorganic composite particles" in an amount corresponding to 0.1% by mass in terms of organic-inorganic composite particles Put into a bottle made of polyethylene, add 0.2% by mass of benzotriazole, 0.1% by mass of maleic acid, and 35% by mass of hydrogen peroxide water in an amount equivalent to 0.3% by mass in terms of hydrogen peroxide in this order, and stir for 15 minutes. Next, ion-exchanged water was added until th...

Embodiment 2～5

[0292] 3.3. Examples 2-5, Comparative Examples 1-2

[0293] Except that the kind and the addition amount of each component of the second grinding water-based dispersion in Example 1 and the pH of the water-based dispersion are set as in Table 2, other experiments were carried out in the same manner as in Example 1, and the No. 2. Grinding water-based dispersions S2-S5 and R1-R2. In addition, in Table 2, "-" means that the component corresponding to the corresponding column was not added. In addition, Example 4 used two types of particles as (B) component, and Example 5 used two types of particles as (A) component.

[0294] As the second polishing water-based dispersion, evaluation was performed in the same manner as in Example 1, except that each of the above-synthesized water-based dispersions was used instead of S1. The results are shown in Table 3.

[0295] Water system

[0296] Example 1

[0297] According to Table 2 and Table 3, it can be seen t...

Embodiment 6

[0299] 3.4.1. Preparation of the second grinding water-based dispersion (a kit for preparing the chemical mechanical grinding water-based dispersion of the first form of the present invention)

[0300] 3.4.1-1. Preparation of liquid (I)

[0301] Water containing colloidal silica particles C1 prepared in the above "3.1.2-1. Preparation of aqueous dispersion containing colloidal silica particles C1" in an amount equivalent to 1.06% by mass in terms of silica Dispersion, and the aqueous dispersion containing organic-inorganic composite particles prepared in the above "3.1.3. Preparation of aqueous dispersion containing organic-inorganic composite particles" in an amount corresponding to 0.11% by mass in terms of organic-inorganic composite particles It was put into a polyethylene bottle, 0.21% by mass of benzotriazole and maleic acid in an amount corresponding to 0.11% by mass were sequentially added thereto, and stirred for 15 minutes. Next, ion-exchanged water was added until ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
voidageaaaaaaaaaa
Login to View More

Abstract

A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt% and the component (B) in an amount of 0.005 to 1.5 wt%, having a ratio (W A / W B ) of the amount (W A ) of the component (A) to the amount (W B ) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0. chemical mechanical grinding method adopting the chemical mechanical polishing aqueous dispersion and kit for concocting the the chemical mechanical polishing aqueous dispersion.

Description

technical field [0001] The invention relates to a chemical mechanical polishing aqueous dispersion, a chemical mechanical polishing method, and a kit for preparing the chemical mechanical polishing aqueous dispersion. [0002] More specifically, the present invention relates to a chemical mechanical polishing aqueous dispersion, a chemical mechanical polishing method using the aqueous dispersion, and a kit for preparing the chemical mechanical polishing aqueous dispersion, wherein the chemical mechanical polishing water This type of dispersion is used in the manufacturing process of semiconductor devices. It can efficiently chemically mechanically polish various materials to be polished each provided on the semiconductor substrate, and can obtain a sufficiently planarized high-precision processing surface. Background technique [0003] In recent years, with the densification of semiconductor devices, the wiring to be formed has been further miniaturized. A technique called ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14
CPCC09G1/02H01L21/3212C09K3/1463H01L21/304
Inventor 内仓和一金野智久川桥信夫服部雅幸
Owner JSR CORPORATIOON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com