Piezoresistance type microwave power sensor and microwave power sensing method thereof

A technology of microwave power and sensing methods, which is applied in the direction of instruments, measuring devices, measuring electronics, etc., can solve the problems of incompatibility of mainstream processes, high production costs, poor repeatability and reliability, etc., achieve good application value, improve performance, Effects of improved repeatability and reliability

Inactive Publication Date: 2006-12-27
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are a series of obstacles in the mass production of integrated circuits based on microwave power sensors based on MEMS structures, such as incompatibility with mainstream processes, poor repeatability and reliability, and high production costs.

Method used

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  • Piezoresistance type microwave power sensor and microwave power sensing method thereof
  • Piezoresistance type microwave power sensor and microwave power sensing method thereof

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Embodiment Construction

[0013] The piezoresistive microwave power sensor of the present invention adopts Si substrate, and obtains the silicon film of certain thickness through substrate backside corrosion process, is provided with SiO on Si substrate 2 insulating layer, made of silicon film and SiO 2 The insulating layer constitutes a double-layer film structure, and a coplanar waveguide is arranged on the double-layer film structure. The terminal of the coplanar waveguide is a matching resistor, and four piezoresistors along the direction are arranged on the edge of the double-layer film structure. , The varistor is connected by metal wires to form a Wheatstone bridge, and the four lead terminals of the Wheatstone bridge are connected to the pressure welding block. The sensor makes the terminal matching resistors on the double-layer film structure with different thermal expansion coefficients, and uses the terminal matching resistors to absorb microwave power to generate heat, resulting in differe...

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Abstract

The invention relates to a piezoresistance microwave power sensor which uses terminal resistance to absorb the microwave power to heat to generate film stress, and uses piezoresistance to test the input microwave power, wherein said sensor uses Si substrate (1) as substrate; the Si3N4 / SiO2 layer (9) is arranged on the bottom of substrate; the Si substrate is arranged with SiO2 insulated layer (2); said SiO2 insulated layer (2) and the silicon film (11) etched on Si substrate form dual-layer film (8) structure arranged with common-surface waveguide (3). The terminal of common waveguide is arranged with matched resistance (4).

Description

technical field [0001] The invention uses a terminal resistance to absorb microwave power to generate heat to generate film stress, and measures input microwave power in a piezoresistive manner, belonging to the technical field of microelectronic devices. Background technique [0002] In microwave technology research, microwave power is an important parameter to characterize microwave signal characteristics. In microwave wireless application and measurement technology, the detection of microwave power is a very important part. The traditional power meter uses a hot spot power sensor in the form of a waveguide, and bismuth-antimony is often used as a thermocouple, and a coaxial cable is used as a transmission line. Its main disadvantages are slow response, low burnout level, attenuators are used when measuring high power, and Cannot be integrated into the circuit. In recent years, foreign countries have proposed a terminal microwave power sensor based on MEMS technology, wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/08G01R31/00
Inventor 黄庆安韩磊廖小平
Owner SOUTHEAST UNIV
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