Piezoresistance type microwave power sensor and microwave power sensing method thereof

Abstract

The invention relates to a piezoresistance microwave power sensor which uses terminal resistance to absorb the microwave power to heat to generate film stress, and uses piezoresistance to test the input microwave power, wherein said sensor uses Si substrate (1) as substrate; the Si3N4 / SiO2 layer (9) is arranged on the bottom of substrate; the Si substrate is arranged with SiO2 insulated layer (2); said SiO2 insulated layer (2) and the silicon film (11) etched on Si substrate form dual-layer film (8) structure arranged with common-surface waveguide (3). The terminal of common waveguide is arranged with matched resistance (4).

Description

technical field [0001] The invention uses a terminal resistance to absorb microwave power to generate heat to generate film stress, and measures input microwave power in a piezoresistive manner, belonging to the technical field of microelectronic devices. Background technique [0002] In microwave technology research, microwave power is an important parameter to characterize microwave signal characteristics. In microwave wireless application and measurement technology, the detection of microwave power is a very important part. The traditional power meter uses a hot spot power sensor in the form of a waveguide, and bismuth-antimony is often used as a thermocouple, and a coaxial cable is used as a transmission line. Its main disadvantages are slow response, low burnout level, attenuators are used when measuring high power, and Cannot be integrated into the circuit. In recent years, foreign countries have proposed a terminal microwave power sensor based on MEMS technology, wh...

AI Technical Summary

Problems solved by technology

There are a series of obstacles in the mass production of integrated circuits based on microwave power sensors based on MEMS structures, such as incompatibility with mainstream processes, poor repeatability and reliability, and high production costs.

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