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Method for preparing thick film of superfine crystal in pure aluminum through DC magnetism controlled sputtering

A DC magnetron sputtering, ultra-fine grain technology, used in sputtering, ion implantation, coating, etc.

Inactive Publication Date: 2007-02-21
重庆工学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Judging from the current state of the art, there are still many difficulties in the process, especially in the selection of process parameters, to obtain ultra-fine-grain thick films of pure aluminum with a thickness exceeding 2 μm.

Method used

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  • Method for preparing thick film of superfine crystal in pure aluminum through DC magnetism controlled sputtering
  • Method for preparing thick film of superfine crystal in pure aluminum through DC magnetism controlled sputtering
  • Method for preparing thick film of superfine crystal in pure aluminum through DC magnetism controlled sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1: Preparation of pure aluminum ultra-fine grain thick film on K glass substrate

[0036] The universal ultra-high vacuum DC magnetron sputtering equipment is used, and a pure aluminum target with a purity of 99.999% is installed on the target stage.

[0037] Choose K glass as the substrate, clean and dry the substrate substrate, then clamp the substrate with a sample holder, and put it into a vacuum chamber. The distance between the target and the substrate is 60mm.

[0038] Use a mechanical pump to evacuate to about 20Pa, and then use a molecular pump to evacuate. The background is generally required to be higher than 10 -4 Therefore, it is necessary to ensure that the vacuuming time is greater than 40 minutes, so that the background vacuum degree is 4×10 -4 Pa;

[0039] Introduce high-purity argon, adjust the flow rate to 20cm 3 / s, keep the vacuum system for 15 minutes of purging.

[0040] After the vacuum degree is stable, start pre-sputtering for 15 mi...

Embodiment 2

[0044] Embodiment 2: Si substrate substrate pure aluminum ultra-fine grain thick film preparation

[0045] The preparation method is the same as in Example 1, the substrate is replaced with a polished Si substrate, and the process parameters are the same as in Example 1. The prepared pure aluminum ultra-fine grain thick film has a film thickness of more than 2 μm, low surface roughness, and good film ratio and orientation. Figure 3b That is to say, it shows the surface morphology of the pure aluminum film on Si as the substrate, and its grains are finer.

Embodiment 3

[0046] Example 3: Preparation of pure aluminum ultra-fine grain thick film deposited on the surface of AZ31B magnesium alloy

[0047] Deposit one layer of pure aluminum ultra-fine grain thick film on the surface of AZ31B magnesium alloy, the preparation method is the same as that of Example 1, and the process parameters are: the flow rate of argon gas is 30cm 3 / s, the air purification time is 10min. The pre-sputtering time is 20min, the current is 0.8A, and the voltage is 300V; during deposition, the working pressure is 1.0Pa, the sputtering current is 1.4A, and the sputtering voltage is 250V; the deposition is carried out in stages until a certain thickness of pure aluminum with fine grains is obtained Ultra-fine grain thick film, the film thickness is above 2μm. . Figure 5 shows the polarization curves of AZ31B magnesium alloy before and after depositing pure aluminum ultrafine grain thick film.

[0048] It is found by electrochemical test that the corrosion potential of...

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Abstract

This invention discloses a method for preparing pure aluminum ultrafine crystal thick film by DC magnetron sputtering. The method comprises: (1) selecting pure aluminum target, installing a substrate, and adjusting the distance between the target and the substrate; (2) evacuating, introducing Ar for 12-25 min, and pre-sputtering for 15-45 min; (3) sputtering for deposition under 0.6-0.8 Pa, Ar flow of 20-40 cm3 / s, sputtering current of 0.8-1.6 A and sputtering voltage of 180-300 V; (4) stopping deposition for 10-30 min after sputtering for 5-15 min, and repeating the procedures until desirable thickness of the pure aluminum ultrafine crystal thick film is reached. The method can obtain pure aluminum ultrafine crystal thick film with a thickness above 2 mum. Besides, the thick film also has cuh advantages as good quality, high thickness and small granularity, and can be used as protective coating layer in such fields as surface engineering and microelectronics.

Description

technical field [0001] The invention relates to the preparation technology of thick film materials, especially the preparation of pure pure aluminum ultrafine crystal thick film materials. Background technique [0002] Aluminum is a lively light metal that has been widely used. In modern industry, pure aluminum is mainly used to manufacture cables and wires, conductive components and other corrosion-resistant and living utensils for the electronics industry, high-purity alloys and laser materials and other industries. In many application fields, especially in integrated circuits and semiconductor devices, aluminum exists as a wire material in the form of thin films. In addition to the small size of the film and the saving of materials, the two-dimensional stretched film also has properties that three-dimensional materials do not have. For example, in recent years, it has been found that pure aluminum coatings have high reflectivity in infrared, ...

Claims

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Application Information

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IPC IPC(8): C23C14/14C23C14/35C23C14/54
Inventor 张津杨栋华欧信兵麻彦龙
Owner 重庆工学院
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