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Photoresist stripping method

A technology of photoresist and photoresist layer, which is applied in optics, photosensitive material processing, original parts for opto-mechanical processing, etc. Remove metal oxides and other problems to avoid metal oxides, reduce resistance, and improve device performance

Inactive Publication Date: 2007-03-21
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is to say, metal oxides will be produced on the metal conductors, which will increase the resistance value and affect the electrical performance of the components.
Although amine-containing solutions are used for cleaning in existing methods, it is difficult to effectively remove metal oxides

Method used

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Embodiment Construction

[0034] 1A to 1D are cross-sectional views illustrating a manufacturing process of a contact window opening according to a preferred embodiment of the present invention. Referring to FIG. 1 , firstly, a dielectric layer 102 is formed on a semiconductor substrate 100 , and a plurality of contact structures 104 are formed in the dielectric layer 102 . Wherein, the material of the contact structure 104 is, for example, nickel silicide (siliconnitride) or an alloy containing nickel silicide, and the alloy of nickel silicide is, for example, platinum or palladium.

[0035] Next, please continue to refer to FIG. 1A, a barrier layer (barrier layer) 106 is formed on the dielectric layer 102, and its material is, for example, silicon nitride (silicon nitride), and the formation method is, for example, chemical vapor deposition (chemical vapor deposition, CVD). Then, a dielectric layer 108 is formed on the barrier layer 106, and its material is, for example, silicon oxide, and its formi...

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Abstract

A photoresist stripping method,firstly, it forms the first dielectric layer, and the first dielectric layer includes many contact structures. Then, on the first dielectric layer there forms the Hindrance layer, and on the Hindrance layer there forms the second dielectric layer. After that, on the second dielectric layer there forms the photoresist layer of design. Nextly, it lets the photoresist layer to be the mask and designs the second dielectric layer and the Hindrance layer to expose one part of the contact structures. It also uses the re-gas to remove the photoresist layer of design. For example, the re-gas has no oxygen. Because re-gas has no oxygen, so it can reduce the contact surface oxide production and the contact resistance of the structure.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a photoresist stripping method. Background technique [0002] At present, existing methods for removing photoresist mainly include a wet photoresist stripping method and a dry photoresist stripping method. Among them, the wet photoresist stripping method mainly uses a photoresist stripping solution to remove a patterned photoresist layer. However, the photoresist stripper will chemically react with the metal conductor and the substrate exposed by the contact window opening or the groove, and then corrode or destroy the shape of the contact window opening and the groove, or form a metal oxide This results in an increase in resistance near the contact window opening. Since the wet photoresist stripping method has the above serious disadvantages, the main photoresist stripping method is the dry photoresist stripping method. [0003] There are mainly two methods for dry phot...

Claims

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Application Information

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IPC IPC(8): G03F7/42G03F1/08H01L21/027
Inventor 吴至宁戴炘江怡颖
Owner UNITED MICROELECTRONICS CORP
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