Check patentability & draft patents in minutes with Patsnap Eureka AI!

Photoresist stripping method

A technology of photoresist and photoresist layer, which is applied in optics, photosensitive material processing, original parts for opto-mechanical processing, etc. Remove metal oxides and other problems to avoid metal oxides, reduce resistance, and improve device performance

Inactive Publication Date: 2007-03-21
UNITED MICROELECTRONICS CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is to say, metal oxides will be produced on the metal conductors, which will increase the resistance value and affect the electrical performance of the components.
Although amine-containing solutions are used for cleaning in existing methods, it is difficult to effectively remove metal oxides

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist stripping method
  • Photoresist stripping method
  • Photoresist stripping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] 1A to 1D are cross-sectional views illustrating a manufacturing process of a contact window opening according to a preferred embodiment of the present invention. Referring to FIG. 1 , firstly, a dielectric layer 102 is formed on a semiconductor substrate 100 , and a plurality of contact structures 104 are formed in the dielectric layer 102 . Wherein, the material of the contact structure 104 is, for example, nickel silicide (siliconnitride) or an alloy containing nickel silicide, and the alloy of nickel silicide is, for example, platinum or palladium.

[0035] Next, please continue to refer to FIG. 1A, a barrier layer (barrier layer) 106 is formed on the dielectric layer 102, and its material is, for example, silicon nitride (silicon nitride), and the formation method is, for example, chemical vapor deposition (chemical vapor deposition, CVD). Then, a dielectric layer 108 is formed on the barrier layer 106, and its material is, for example, silicon oxide, and its formi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A photoresist stripping method,firstly, it forms the first dielectric layer, and the first dielectric layer includes many contact structures. Then, on the first dielectric layer there forms the Hindrance layer, and on the Hindrance layer there forms the second dielectric layer. After that, on the second dielectric layer there forms the photoresist layer of design. Nextly, it lets the photoresist layer to be the mask and designs the second dielectric layer and the Hindrance layer to expose one part of the contact structures. It also uses the re-gas to remove the photoresist layer of design. For example, the re-gas has no oxygen. Because re-gas has no oxygen, so it can reduce the contact surface oxide production and the contact resistance of the structure.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a photoresist stripping method. Background technique [0002] At present, existing methods for removing photoresist mainly include a wet photoresist stripping method and a dry photoresist stripping method. Among them, the wet photoresist stripping method mainly uses a photoresist stripping solution to remove a patterned photoresist layer. However, the photoresist stripper will chemically react with the metal conductor and the substrate exposed by the contact window opening or the groove, and then corrode or destroy the shape of the contact window opening and the groove, or form a metal oxide This results in an increase in resistance near the contact window opening. Since the wet photoresist stripping method has the above serious disadvantages, the main photoresist stripping method is the dry photoresist stripping method. [0003] There are mainly two methods for dry phot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/42G03F1/08H01L21/027
Inventor 吴至宁戴炘江怡颖
Owner UNITED MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com